Field-effect transistor accumulation layer

Kiguchi M, Nakayama M, Fujiwara K, Ueno K, Shimada T, Saiki K (2003) Accumulation and depletion layer thickness in organic field effect transistors. Jpn J Appl Phys 42 L1408-L1410... 

Yuan HT, Shimotani H, Tsukazaki A et al (2009) High-density carrier accumulation in ZnO field-effect transistors gated by electric double layers of ionic liquids. Adv Fund Mater 19 1046-1053... 

Burgi, L., Friend, R.H., and Sirringhaus, H., Formation of the accumulation layer in polymer field-effect transistors, Appl. Phys. Lett. 82, 1482-1484, 2003. 

Thin film field-effect transistors are prepared by using LB films with thicknesses ranging from a monolayer to some ten monolayers as the active material (cf Sect. 3.7) [428]. Metal oxide semiconductor field-effect transistor (MOS-FET) devices work through the modulation of an accumulation layer at the... 

Second, a diamond surface with NEA exhibits a novel doping mechanism that relies on the low ionization energy of diamond with NEA. This transfer doping mechanism yields a subsurface hole accumulation layer and a concomitant high surface conductivity (SC) that is discussed in volume 6. Field effect transistors (FETs) based on this kind of SC have been built [33-35], and attempts are being made to exploit the sensitivity of SC in diamond for ion-sensitive electronic devices such as ion-sensitive FETs (ISFETs) [36, 37]. 

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