Field-effect transistor nanowire

Ju, S. Lee, K. Yoon, M.-H. Facchetti, A. Marks, T. J. Janes, D. B. 2007. High performance ZnO nanowire field effect transistors with organic gate nanodielec-... 

Cui, Y. Zhong, Z. Wang, D. Wang, W. U. Lieber, C. M. 2003. High performance silicon nanowire field effect transistors. Nano Lett. 3 149-152. 

In recent years much effort has been spent on the development of experimental techniques to grow well defined nanoscale materials, due to their possible applications in nanometric electronic devices. Indeed the creation of nanowire field effect transistors [128-132], nano-sensors [133,134], atomic scale light emitting diodes and lasers [135,136], has been made possible by the development of new techniques, which allow one to control the growth processes of nanotubes, nanowires and quantum dots. Of particular importance, among the different atomic scale systems experimentally studied, are... 

Greytak, A.B. Lauhon, L.J. Gudiksen, M.S. Lieber, C.M. Growth and transport properties of complementary germanium nanowire field-effect transistors. Appl. Phys. Lett. 2004, 84 (21), 4176-4179. 

Chang Y.-K, Hong F. C.-N.The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing. Nanotech. 2009 20 195302 6pp. 

Cobalt-PPy-cobalt nanowire was electrochemically synthesized inside alumina membrane and the field-effect transistors were fabricated by patterning a gate on one side of the cobalt-PPy-cobalt nanowire [409]. The measiued output and transfer characteristics are as good as or better than PPy film field-effect transistors. The gain of the nanowire field-effect transistors could be controlled with successive electrochemical doping of the PPy segment. 

Bashouti MY, Stelzner T, Berger A, Christiansen S, Haick H (2008) Chemical passivation of sdicon nanowires with C1-C6 alkyl chains through covalent Si-C bonds. J Phys Chem C 112 19168-19172 Bashouti MY, Tung RT, Haick H (2009a) Tuning electrical properties of Si nanowire field effect transistors by molecular... 

Paska Y, Stelzner T, Christiansen S, Haick H (2011) Enhanced sensing of nonpolar volatile organic compounds by silicon nanowire field effect transistors. ACS Nano 5(7) 5620-5626 Peng K-Q, Yan Y-J, Gao S-P, Zhu J (2002) Synthesis of large-area silicon nanowire arrays via self-assembling nanoelectrochemistry. Adv Mater 14 1164-1167... 

Chen, H.-C., Chen, Y.-T., Tsai, R.-Y, Chen, M.-C., Chen, S.-L., Xiao, M.-C., Chen, C.-L., Hua, M.-Y, 2015. A sensitive and selective magnetic graphene composite-modified polycrystalline-silicon nanowire field-effect transistor for bladder cancer diagnosis. Biosensors Bioelectronics 66, 198-207. 

Chen, K.-L, Li, B.-R., and Chen, Y.-T. (2011) Silicon nanowire field-effect transistor-based biosensors for biomedical diagnosis and cellular recording investigation. Nano Today, 6,131-154. 

Lin. M.C. et al. (2007) Control and detection of organosilane polarization on nanowire field-effect transistors. Nano Lett., 7 (12), 3656-3661. 

Fan, Zh. and Jia, G.Lu. (2005) Electrical properties of ZnO nanowire field effect transistors characterized with scanning probes. Applied Physics Letters, 86,032111. 

While the discussion in this chapter has focused on molecular layers on single crystal silicon surfaces, the attachment chemistries discussed here could easily be applied to functionalize silicon nanowires or nanoparticles. Silicon nanowires have been shown to exhibit interesting electrical transport characteristics and have been used to fabricate nanoscale pn junctions [95], field effect transistors [96] and biochemical sensors [97-100]. However, all these interesting phenomena have been reported on oxidized silicon nanowires. It is likely that better control over the surface properties, as could be achieved by employing some of the chemistry discussed here, could significantly improve the performance of these nanowire-based devices. From another perspective, silicon nanowires could prove extremely... 

Bjomhohn, T. et al.. Polythiophene nanowires, Adv. Mater. 11, 1218-1221, 1999. Bao, Z., Dodabalapur, A., and Lovinger, A.J., Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor apphcations with high mobility, AppZ. Phys. Lett. 69, 4108-4110, 1996. 

Figure 2.32 Field-effect transistor based on single conducting PANI-NF. (Reprinted with permission from Journal of Physical Chemistry C, Field-Effect Transistors based on Single NanowIres of Conducting Polymers by A. K. Wanekaya, Mangesh A. Bangat et al., 111, 13, 5218-5221. Copyright (2007) American Chemical Society)...

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