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Field transistors

This is the sole example of a device that has been experimentally demonstrated . The device has two current electrodes frozen into the near-surface layer of ice and a gate across the dielectric layer, located above the region between the current electrodes. By supplying a voltage of different polarities across the controlling electrode, the carrier concentration in the near-surface region may be varied. By studying the frequency dispersion of the near-surface conduction, one may determine the mobilities of all the four types of carriers in ice HjO , OH , D and L defects. Naturally, a field transistor may be used not only for research purposes but, also, as a power amplifier or memory device. [Pg.525]

Electronic properties semiconductor and metal conductivity, magneto-resistance, emission of electrons, electronic devices of the molecular size, information recording, diodes, field transistors, cold cathodes, materials for displays, quantum wires and dots, cathodes for X-ray radiation, electric probes, etc. [Pg.12]

CNTs and other nano-sized carbon structures are promising materials for bioapplications, which was predicted even previous to their discovery. These nanoparticles have been applied in bioimaging and drag delivery, as implant materials and scaffolds for tissue growth, to modulate neuronal development and for lipid bilayer membranes. Considerable research has been done in the field of biosensors. Novel optical properties of CNTs have made them potential quantum dot sensors, as well as light emitters. Electrical conductance of CNTs has been exploited for field transistor based biosensors. CNTs and other nano-sized carbon structures are considered third generation amperometric biosensors, where direct electron transfer between the enzyme active center and the transducer takes place. Nanoparticle functionalization is required to achieve their full potential in many fields, including bio-applications. [Pg.274]

Figure 1.6. Schematic of an n-type metal-oxide-semiconductor (MOS) field transistor cross-section [19]... Figure 1.6. Schematic of an n-type metal-oxide-semiconductor (MOS) field transistor cross-section [19]...
Polypyrrole and polythiophene, both first described in 1963 as electrically conducting materials [la], experienced a renaissance when Diaz and Street gave new attention to the electrochemical oxidation of pyrrole [21], and Gamier to the polythiphene field transistor. Polyphenylene vinylene, polyaniline, polyphenylene sulfide, polycarbazole, polyindole, polypyrene and polyene fulvene are just a few of the large number of electrically conducting polymers with specific properties and interest [22]. [Pg.118]

CNTs represent a new generation of materials, materials from semiconductors to metals catalyzed by fullerenes [130] the CNTs are nano-wires for electronic devices, assembled to well defined aggregates they may be used as field transistors. [Pg.778]

Also the polysiloxane gel functionalized by sensitive macromolecules a-CD and p CD have been synthesized and used as a receptor for Ion-Sensitive Field Transistors (ISFET) and Electrolyte Insulator Semiconductor (EIS) ions sensors [25]. The samples were characterized by electrochemical measurements in several ionic concentrations in aqueous solution. The role of interfering ions and sensor stability was investigated. The sensor performance sensitivity increases by incorporating of CD receptor in the gel structure. The responses of a-CD-PS/EIS and a-CD-PS/ISFET to Cd ion are similar. These results indicate that sensitivity... [Pg.1510]

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-... Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...
Electron tunnelling tlirough monolayers of long-chain carboxylic acids is one aspect of interest since it was assumed tliat such films could be used as gate electrodes in field-effect transistors or even in devices depending on electron tunnelling [24, 26, 35, 36, 37 and 38]- It was found, however, tliat tlie whole subject depends critically on... [Pg.2614]

The bipolar junction transistor (BIT) consists of tliree layers doped n-p-n or p-n-p tliat constitute tire emitter, base and collector, respectively. This stmcture can be considered as two back-to-back p-n junctions. Under nonnal operation, tire emitter-base junction is forward biased to inject minority carriers into tire base region. For example, tire n type emitter injects electrons into a p type base. The electrons in tire base, now minority carriers, diffuse tlirough tire base layer. The base-collector junction is reverse biased and its electric field sweeps tire carriers diffusing tlirough tlie base into tlie collector. The BIT operates by transport of minority carriers, but botli electrons and holes contribute to tlie overall current. [Pg.2891]

DCFET. See Doped channel field-effect transistor. [Pg.279]

MESFET. See Metal semiconductor field-effect transistor. [Pg.607]

Metal oxide semiconductor field-effect transistor pOSFEQ... [Pg.609]

MODFET. See Modulation doped field-effect transistor. [Pg.640]

Tra.nsitorAmplifiers. Most gaUium-based field-effect transitor amplifiers (FETs) are manufactured using ion implantation (qv) (52), except for high microwave frequencies and low noise requirements where epitaxy is used. The majority of discrete high electron mobiHty transistor (HEMT) low noise amplifiers are currently produced on MBE substrates. Discrete high barrier transistor (HBT) power amplifiers use MOCVD and MBE technologies. [Pg.164]

Because of the very large resistance of the glass membrane in a conventional pH electrode, an input amplifier of high impedance (usually 10 —10 Q) is required to avoid errors in the pH (or mV) readings. Most pH meters have field-effect transistor amplifiers that typically exhibit bias currents of only a pico-ampere (10 ampere), which, for an electrode resistance of 100 MQ, results in an emf error of only 0.1 mV (0.002 pH unit). [Pg.467]

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. [Pg.348]

Selenium and selenium compounds are also used in electroless nickel-plating baths, delayed-action blasting caps, lithium batteries, xeroradiography, cyanine- and noncyanine-type dyes, thin-film field effect transistors (FET), thin-film lasers, and fire-resistant functional fluids in aeronautics (see... [Pg.338]

Eig. 10. The n—p—n transistor biased ia its active region, where 7 = current, (------) indicate depletion regions at the p—n junctions, and S is the electric field ... [Pg.351]

See other pages where Field transistors is mentioned: [Pg.92]    [Pg.570]    [Pg.98]    [Pg.525]    [Pg.340]    [Pg.32]    [Pg.92]    [Pg.570]    [Pg.98]    [Pg.525]    [Pg.340]    [Pg.32]    [Pg.1785]    [Pg.2892]    [Pg.399]    [Pg.401]    [Pg.401]    [Pg.478]    [Pg.521]    [Pg.521]    [Pg.537]    [Pg.203]    [Pg.208]    [Pg.245]    [Pg.245]    [Pg.442]    [Pg.276]    [Pg.465]    [Pg.348]    [Pg.378]    [Pg.343]    [Pg.352]    [Pg.352]    [Pg.360]   


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All-organic field effect transistor

Application of Field-Effect Transistors to Label-Free Electrical DNA Biosensor Arrays

Biosensors field-effect transistor-based

Bipolar field-effect transistors

Carbon field-effect transistor

Carbon nanotube field-effect transistors

Chemical field effect transistor

Chemically effective field-effect transistor

Chemically modified field-effect transistors

Chemically sensitive field effect transistors

Chemically sensitive field effect transistors CHEMFETs)

Contact effects in organic field-effect transistors

Copolymers field effect transistors

Dielectric material-gate field effect transistor

EGFET (extended gate field effect transistor

Electrical properties field-effect transistors

Electroactive oligothiophenes and polythiophenes for organic field effect transistors

Electrode field effect transistor

Enzymatically coupled field effect transistor

Enzyme field effect transistor

Enzyme field-effect transistors (ENFETs

FET—See Field effect transistor

Ferroelectric field effect transistors

Fibrous field-effect transistors

Field Effect Transistors for Transport

Field effect transistor diamond

Field effect transistor extended gate

Field effect transistor operational principle

Field effect transistor sensor

Field effect transistor, addressing

Field effect transistor-based biosensor

Field effect transistor-based sensors

Field effect transistors, device characteristics

Field-Effect Transistor Arrays

Field-Effect Transistor-Based Aptasensors

Field-Effect Transistors Based on Single SWCNTs

Field-Effect Transistors with Semiconductor Gate

Field-effect transistor

Field-effect transistor P3HT-based

Field-effect transistor accumulation layer

Field-effect transistor ambipolar

Field-effect transistor applications

Field-effect transistor capacitance

Field-effect transistor channel material

Field-effect transistor characteristics

Field-effect transistor chemically selective

Field-effect transistor current-voltage curves

Field-effect transistor devices

Field-effect transistor dielectrics

Field-effect transistor drain electrode

Field-effect transistor electrospun

Field-effect transistor fabrication

Field-effect transistor gate electrode

Field-effect transistor gate voltage

Field-effect transistor hole

Field-effect transistor hole mobilities

Field-effect transistor operation

Field-effect transistor output characteristics

Field-effect transistor performance

Field-effect transistor sensor configuration

Field-effect transistor sensor matrix

Field-effect transistor sensors sensor configuration

Field-effect transistor silicon nitride

Field-effect transistor solution-processed organic semiconductor

Field-effect transistor source electrode

Field-effect transistor stability

Field-effect transistor standard potential

Field-effect transistor suspended gate

Field-effect transistor technology

Field-effect transistor transfer characteristics

Field-effect transistor transport

Field-effect transistor, schematic

Field-effect transistors Metal-oxide-semiconductor FETs

Field-effect transistors biosensors

Field-effect transistors device architectures

Field-effect transistors gate bias

Field-effect transistors nanoscale

Field-effect transistors source-drain current

Field-effect transistors structure

Field-effect transistors substituted oligothiophenes

Field-effect transistors threshold voltage

Field-effect transistors, FETs

Field-effect transistors, function

Flow Field-Effect Transistor

Gate Dielectrics and Surface Passivation Layers for Organic Field Effect Transistors

Graphene field effect transistors

Heterojunction field-effect transistors

IGFET, (insulated-gate field effect transistor

Immuno field effect transistors

Insulated gate field-effect transistor

Insulated gate field-effect transistors IGFETs)

Ion Sensitive Organic Field-Effect Transistors (ISOFETs)

Ion selective field effect transistors ISFETs)

Ion-selective field effect transistor Ionophore

Ion-selective field effect transistor acyclic

Ion-selective field effect transistor guanidinium

Ion-selective field effect transistor macrocyclic

Ion-selective field effect transistor organometallic

Ion-selective field effect transistors

Ion-selective field-effect transistor (ISFET

Ion-sensitive field effect transistor

Ion-sensitive field effect transistor ISFET)

Ion-sensitive field effect transistor device

Ion-sensitive field effect transistors (ISFETs

Junction field-effect transistor

Light-emitting field-effect transistors

Light-emitting organic field-effect transistors

MISFET Field Effect Transistor

MOS field-effect transistor

MOSFET field-effect transistor

MOSFETs field-effect transistor

Mechanisms of Hysteresis in Polymer Field-Effect Transistors

Metal insulator semiconductor field effect transistor technolog

Metal oxide field effect transistor

Metal oxide semiconducting field effect transistor

Metal oxide semiconductor field effect transistor switching circuit

Metal oxide semiconductor field effect transistors, MOSFETs

Metal oxide semiconductor field-effect transistor

Metal oxide semiconductor field-effect transistor MOSFET)

Metal oxide semiconductor field-effect transistor, principles

Metal oxide silicon field-effect transistor MOSFET)

Metal oxide-silicon field-effect transistors

Metal-Insulator-Semiconductor Field Effect Transistor

Metal-oxide-semiconductor field-effect transistor development

Metal-oxide-semiconductor field-effect transistor, characteristics

Metal-semiconductor field effect transistor

Metal-semiconductor field effect transistors MESFETs)

Model oligothiophene field-effect transistors

Nanotube field effect transistor

Nanowire field-effect transistors

Nanowires field-effect transistors

Nucleic acids field-effect transistors

Oligo- and Polythiophene Field Effect Transistors

Oligothiophenes field-effect transistors

Organic Field Effect Transistors (FETs)

Organic Field Effect Transistors principles

Organic Field-Effect Transistors for Spin-Polarised Transport

Organic Field-Effect Transistors ionic

Organic Field-Effect Transistors liquid

Organic Field-Effect Transistors molecular, example

Organic Field-Effect Transistors schematic

Organic Field-Effect Transistors semiconductors

Organic Field-Effect Transistors sexithiophene

Organic Field-Effect Transistors solids

Organic field effect transistors OFET electrodes

Organic field effect transistors OFET)

Organic field effect transistors device architectures

Organic field effect transistors device configurations

Organic field effect transistors device geometries

Organic field effect transistors material requirements

Organic field effect transistors oligomers

Organic field effect transistors performance characterization

Organic field effect transistors selenophenes

Organic field effect transistors solution-processable materials

Organic field-effect transistor ambipolar

Organic field-effect transistor bottom-contact

Organic field-effect transistor carrier density

Organic field-effect transistor charge transport

Organic field-effect transistor contact resistance

Organic field-effect transistor development

Organic field-effect transistor device

Organic field-effect transistor fabrication

Organic field-effect transistor ideal

Organic field-effect transistor integrated circuits based

Organic field-effect transistor mobile charges

Organic field-effect transistor ohmic contacts

Organic field-effect transistor patterning

Organic field-effect transistor pentacene

Organic field-effect transistor performance

Organic field-effect transistor potential

Organic field-effect transistor rubrene

Organic field-effect transistor shift

Organic field-effect transistor single-crystal

Organic field-effect transistor transport

Organic field-effect transistor vacuum-gap

Organic field-effect transistors

Organic field-effect transistors (OFETs

Organic field-effect transistors device fabrication process

Organic field-effect transistors drain

Organic field-effect transistors drain current

Organic field-effect transistors electronic characterization

Organic field-effect transistors frequency

Organic field-effect transistors high mobility

Organic field-effect transistors saturation mobility

Organic field-effect transistors source

Organic field-effect transistors source-drain current

Organic field-effect transistors source-drain voltage

Organic field-effect transistors source-gate voltage

Organic field-effect transistors structure

Organic field-effect transistors threshold voltage

Organic polymer field-effect transistor

Oxide semiconductor-gate field effect transistor

Palladium gate field effect transistors

Physics of Organic Field-Effect Transistors

Piezoelectric oxide semiconductor field effect transistor

Piezoelectric oxide semiconductor field effect transistor POSFET)

Planar transistors field-effect transistor

Polyaniline field-effect transistors

Polymer Nanofiber Field-effect Transistors

Polymer field-effect transistor

Polymer field-effect transistor frequency

Polymer field-effect transistor on Si I SiO2 wafer

Polythiophenes field-effect transistors

Proteins field-effect transistors

Redox Field Effect Transistor

Reference field-effect transistors

SGFET (suspended gate field effect transistors

Sensitive Organic Field-effect Transistors

Sensors based on ion-selective field-effect transistors

SiC Field Effect Transistors

Single-crystal organic field-effect transistors OFETs

Single-crystal organic field-effect transistors charge carrier transport

Single-walled carbon nanotube field effect transistor

Solution Processed Donor-Acceptor Copolymer Field-Effect Transistors

Surface field effect transistors

The Ion-Selective Field Effect Transistor (ISFET)

The Ion-Selective Field-Effect Transistor

Thienothiophene copolymers in field effect transistors

Transducers field effect transistor-based

Transistors, metal oxide semiconductor field

Unipolar Field-Effect Transistors

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