Transistor effect

An SWCNT a few microns long with electrical contacts deposited via nanolithography techniques is an ideal system to study single-molecule transistor effects, in which an electrode (Vga/e) close to the conducting CNT is used to modulate the conductance [33]. 

Urbana) and W. H. Brattain (Murray Hill) investigations on semiconductors and discovery of the transistor effect. 

Joachim C, Gimzewski JK, Tang H (1998) Physical principles of the single-C60 transistor effect. Phys Rev B 58 16407... 

In 1972 John Bardeen did something that no other physicist, not even Albert Einstein, had ever done. He won his second Nobel Prize in physics. The first was awarded to him (and to Walter H. Brattain and William Shock-ley) in 1956 for investigations on semiconductors and the discovery of the transistor effect. ... 

A second approach is to pattern the gate and the source/drain using the same step, as shown in Fig. 5.10 [109]. A disadvantage of this approach is that there is some ungated transistor (effectively with Vg = 0) between the edge of the source and drain and the accumulated channel over the gate. This limits the applicability of this approach to processes where the devices are at least partially accumulated under zero bias. 

This invention ignited a huge research effort in solid state electronics across the world. Bardeen and Brattain received the Nobel Prize in physics in 1956, together with Shockley, for their researches on semiconductors and their discovery of the transistor effect. Shockley had developed a so-called junction transistor in 1949, which was built on thin slices of different types of semiconductor materials pressed together. The junction transistor was easier to understand theoretically, could be manufactured more reliably, and became the preferred semiconductor device, which ushered in the modem electronic era. ... 

Gunn effect Laser effect Photovoltaic effect Piezoelectric effect Piezoresistance Transistor effect Tunnel effect Varactor effect... 

Yuen JD, Fan J, Seifter J, Lim B, Hufschmid R, Heeger AJ, Wutll F (2011) High paformance weak donor-acceptor polymers in thin film transistors effect of the acceptor on electronic properties, ambipolar conductivity, mobility, and thermal stability. J Am Chem Soc 133 20799-20807... 

Natali D, Fumagalli L, Sampietro M (2007) Modeling of organic thin film transistors effect of contact resistances. J Appl Phys 101 014501-014512... 

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