Light-emitting field-effect transistors

Fig. 12. Molecular structure of Pt(II) complexes and their emission in organic light-emitting field effect transistors. Reproduced with the permission of Wiley-VCH, Ref. 214).

A. Hepp, H. Heil, W. Weise, M. Ahles, R. Schmechel and H. von Seggern, Light-emitting field-effect transistor based on a tetracene thin film, Phys. Rev. Lett, 91, 157406 (2003). 

K. Yamane, H. Yanagi, A. Sawamoto and S. Hotta, Ambipolar organic light emitting field effect transistors with modified asymmetric electrodes, Appl. Phys. Lett., 90, 162108 (2007). 

Fig. 5 The tiansfer characteristic and the position of the recombination zone relative to the source contact of a light-emitting field-effect transistor. The transistor has been measured at Vd = 100 V. The device scheme and a micrograph of the channel of the OFET driven in the ambipolar regime are depicted as insets. The device consists of poly(methylmethacrylate) (PMMA), poly(9,9-di-n-octyl-fluorene-a/t-benzothiadiazole) (F8BT), and Au source/drain terminals. The source drain metallization was 40 nm thick and the channel length was lOOpm (L). The optical micrograph was taken at Vg = 55 V and Vd = 100 V. The recombination zone appears as a narrow luminescent line in the middle of the channel. With peimission reprinted from [43], copyright 2008 Oldenbouig Wissenschaftsverlag GmbH...

Hepp A, Hefi H, Weise W, Ahles M, Schmechel R, von Seggern H (2003) Light-emitting field-effect transistor based on atetracene thin film. Phys Rev Lett 91 157406... 

Polymer Light-Emitting Field Effect Transistors... 

By 1988, a number of devices such as a MOSFET transistor had been developed by the use of poly(acetylene) (Burroughes et al. 1988), but further advances in the following decade led to field-effect transistors and, most notably, to the exploitation of electroluminescence in polymer devices, mentioned in Friend s 1994 survey but much more fully described in a later, particularly clear paper (Friend et al. 1999). The polymeric light-emitting diodes (LEDs) described here consist in essence of a polymer film between two electrodes, one of them transparent, with careful control of the interfaces between polymer and electrodes (which are coated with appropriate films). PPV is the polymer of choice. 

As a class of n-type organic semiconductors, PBI derivatives have received considerable attention for a variety of applications [312, 313], for example, for organic or polymer light-emitting diodes (OLEDs and PLEDs) [314, 315], thin-film organic field-effect transistors (OFETs) [316, 317], solar cells [318, 319], and liquid crystals [320]. They are also interesting candidates for single-molecule device applications, such as sensors [321], molecular wires [322], or transistors [141]. 

Since the discovery of doped polyacetylene, a range of polymer-intense semiconductor devices have been studied including normal transistors and field-effect transistors (FETs), and photodiodes and light-emitting diodes (LEDs). Like conductive polymers, these materials obtain their properties due to their electronic nature, specifically the presence of conjugated pi-bonding systems. 

P. G. LeComber and W. E. Spear, The Development of the a-Si H Field-Effect Transistor and Its Possible Applications D. G. Ast, a-Si H FET-Addressed LCD Panel S. Kaneko, Solid-State Image Sensor M. Matsumura, Charge-Coupled Devices M. A. Bosch, Optical Recording A. D Amico and G. Fortmato, Ambient Sensors H. Kukimoto, Amorphous Light-Emitting Devices R. J. Phelan, Jr., Fast Detectors and Modulators J. I. Pankove, Hybrid Structures... 

Tanase C, Meijer EJ, Blom PWM, de Leeuw DM (2003) Unification of the hole transport in polymeric field-effect transistors and light-emitting diodes. Phys Rev Lett 91 216601... 

GaAs is expected to be used for ICs (Integrated Circuit), FETs (Field Effect Transistor), LEDs (Light Emitting Diode), semiconductor lasers, and as the base material for IC. To put GaAs to practical use, the following points have to be examined in detail ... 

A PLED based on the fluorene-PTV copolymer 591 emitted red-orange light (02MI192). Cyano substituted poly(thienylene-viniylene-thienylene) s have been synthesized and tested for their use in photovoltaic devices and field-effect transistors (09JPS(A)4028). 

In recent years much effort has been spent on the development of experimental techniques to grow well defined nanoscale materials, due to their possible applications in nanometric electronic devices. Indeed the creation of nanowire field effect transistors [128-132], nano-sensors [133,134], atomic scale light emitting diodes and lasers [135,136], has been made possible by the development of new techniques, which allow one to control the growth processes of nanotubes, nanowires and quantum dots. Of particular importance, among the different atomic scale systems experimentally studied, are... 

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