Field-effect transistors nanoscale

Tulevski GS, Miao Q, Afzali A, Graham TO, Kagan CR, Nuckolls C (2006) Chemical complementarity in the contacts for nanoscale organic field-effect transistors. J Am Chem Soc 128 1788-1789... 

Today the frontier of the fabrication of electronic devices has moved from the micrometer scale down to tens of nanometers scale. Scaled-down conventional devices such as field-effect transistors and devices based on quantum effects are two most prominent examples of the electronic miniaturisation [20, 23,430]. The major challenges in preparation of such devices are (i) growing the substrate materials and (ii) patterning the substrates. Whereas the former rely on self-organisation of the surface structure, the substrate patterning on the nanoscale requires special tools. 

In recent years much effort has been spent on the development of experimental techniques to grow well defined nanoscale materials, due to their possible applications in nanometric electronic devices. Indeed the creation of nanowire field effect transistors [128-132], nano-sensors [133,134], atomic scale light emitting diodes and lasers [135,136], has been made possible by the development of new techniques, which allow one to control the growth processes of nanotubes, nanowires and quantum dots. Of particular importance, among the different atomic scale systems experimentally studied, are... 

While the discussion in this chapter has focused on molecular layers on single crystal silicon surfaces, the attachment chemistries discussed here could easily be applied to functionalize silicon nanowires or nanoparticles. Silicon nanowires have been shown to exhibit interesting electrical transport characteristics and have been used to fabricate nanoscale pn junctions [95], field effect transistors [96] and biochemical sensors [97-100]. However, all these interesting phenomena have been reported on oxidized silicon nanowires. It is likely that better control over the surface properties, as could be achieved by employing some of the chemistry discussed here, could significantly improve the performance of these nanowire-based devices. From another perspective, silicon nanowires could prove extremely... 

Guo, L.J. Krauss, P.R. Chou, S.Y. Nanoscale silicon field effect transistors fabricated using imprint lithography. Appl. Phys. Lett. 1997, 71 (13), 1881-1883. 

Wang, L., Fine, D., Torsi, L., and Dodabalapur, A., Nanoscale organic and polymeric field-effect transistors as chemical sensors. Anal. Bioanal. Chem., 384, 310, 2006. Gruner, G., Carbon nanotube transistors for biosensing applications. Anal. Bioanal. Chem., 384, 322, 2006. 

A. Matsumoto, Y. Miyahara, Current and emerging challenges of field effect transistor based biosensing, Nanoscale 5 (2013) 10702-10718. 

Directed self-assembly shows promise in advanced lithography and a variety of other applications that have less complex requirements. For example, directed self-assembly could be used for enhancing etch selectivity, placing dopants in ordered arrays, or generating high-density, close-packed electrodes in capacitor arrays [6]. Additionally, the assembled nanostructures could be used for fabricating densely packed porous templates [12-14] or membranes [15, 16] at the nanoscale. Other potential applications of assembled block copolymer thin films include the fabrication of MOSFETs (metal-oxide-semiconductor field-effect transistors) [17], quantum dots [18], high surface area devices [19, 20], photovoltaic devices [21], and bit patterned media [22-24]. 

Hoppe A, Seekamp J, Balster T, Gotz G, Buerle P, Wagner V (2007) Tuning the contact resistance in nanoscale oligothiophene field effect transistors. Appl Phys Lett 91 132115... 

The advanced level of a synthetic control for ZnS and other nanostructures and their rich morphologies at the nanoscale has provided the way to the unique applications in the fields of electronics, optoelectronics, sensors, life sciences, defense, energy, environmental science, and engineering. The recent achievements in ZnS nanostructures-based field emitters, field effect transistors and analysis of their carrier characteristics, p-type conductivity, catalytic activities, UV-light sensors, chemical sensors (including gas sensors), biosensors, and nanogenerators have been found to be very important. 

Rolf Konenkamp is the Gertrude-Rempfer Professor of Physics at Portland State University in Portland, Oregon. His present research interests lie in the field of nanoscience. He has worked extensively on semiconductor devices, such as nanostructured solar cells and nanowire light-emitting diodes and transistors, and he holds several patents in this area. He has led the design and construction of a new high-resolution photoelectron microscope since 2002. This will be one of the first aberration-corrected microscopes of this type and it will be used to explore transport and confinement effects on the nanoscale. He has worked at NREL, HMI Berlin, Hitachi Tokyo, Princeton University and at the 1ST in Lisbon, and he is a member of the national R D team for thin-fUm photovoltaics in the US. 

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