Field effect transitors

Tra.nsitorAmplifiers. Most gaUium-based field-effect transitor amplifiers (FETs) are manufactured using ion implantation (qv) (52), except for high microwave frequencies and low noise requirements where epitaxy is used. The majority of discrete high electron mobiHty transistor (HEMT) low noise amplifiers are currently produced on MBE substrates. Discrete high barrier transistor (HBT) power amplifiers use MOCVD and MBE technologies. 

Maehashi, K., Katsura, T., Kerman, K., Takamura, Y., Matsumoto, K., and Tamiya, E. (2007) Label-free protein biosensor based on aptamer-modified carbon nanotube field-effect transitors. Anal. Chem. 79, 782-787. 

Regioregular intriniscally conducting mono-, di-, and triblock moderate molecular weight polythiophenes containing a well-defined terminus, (Vlll), were prepared by McCullough [7] and used in thin field-effect transitor applications. 

MOSFET metal-oxide semiconductor field-effect transitor... 

Zen, A., et al. 2004. Efiect of molecular weight and annealing of poly(3-hexylthiophene)s on the performance of organic field-effect transitors. Adv Fund Mat 14 757. 

Bioelectronics the incorporation of biological materials into electronic devices, e. g. Enzfets (see Field effect transitors). See Biosensor. The term is also used in a general sense for the application of electronics to the investigation of biological processes. 

G. Horowitz, D. Fichou, X. Z. Peng, Z. G. Xu and F. Gamier, A field-effect transitor based on conjugated alpha-sexithienyl. Solid State Commun., 1989,72,381 G. Horowitz, X. Z. Peng, D. Fichou and F. Gamier, The oligothiophene-based field-effect transistor How it works and how to improve it, J. Appl. Phys., 1990,67, 528. 

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