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Rutherford backscattering

Taglauer E 1997 Low-energy Ion scattering and Rutherford backscattering Surface Analysis The Principal Techniques ed J C VIckerman (Chichester Wiley) pp 215-66... [Pg.1827]

B1.24 Rutherford backscattering, resonance scattering, PIXE and forward (recoil) scattering... [Pg.1827]

Rutherford backscattering spectrometry is the measurement of the energies of ions scattered back from the surface and the outer microns (1 micron = 1 pm) of a sample. Typically, helium ions with energies around 2 MeV are used and the sample is a metal coated silicon wafer that has been ion implanted with about a... [Pg.1827]

By inserting a semiconductor x-ray detector into the analysis chamber, one can measure particle induced x-rays. The cross section for particle induced x-ray emission (PIXE) is much greater than that for Rutherford backscattering and PIXE is a fast and convenient method for measuring the identity of atomic species within... [Pg.1828]

This overview covers the major teclnhques used in materials analysis with MeV ion beams Rutherford backscattering, chaimelling, resonance scattering, forward recoil scattering, PIXE and microbeams. We have not covered nuclear reaction analysis (NRA), because it applies to special incident-ion-target-atom combinations and is a topic of its own [1, 2]. [Pg.1829]

The discussion of Rutherford backscattering spectrometry starts with an overview of the experimental target chamber, proceeds to the particle kinematics that detennine mass identification and depth resolution, and then provides an example of the analysis of a silicide. [Pg.1829]

The essentially non-destmetive nature of Rutherford backscattering spectrometry, combmed with the its ability to provide botli compositional and depth mfomiation, makes it an ideal analysis tool to study thm-film, solid-state reactions. In particular, the non-destmetive nature allows one to perfomi in situ RBS, thereby characterizing both the composition and thickness of fomied layers, without damaging the sample. Since only about two minutes of irradiation is needed to acquire a Rutherford backscattering spectmm, this may be done continuously to provide a real-time analysis of the reaction [6]. [Pg.1835]

Chaimelling phenomena were studied before Rutherford backscattering was developed as a routine analytical tool. Chaimelling phenomena are also important in ion implantation, where the incident ions can be steered along the lattice planes and rows. Channelling leads to a deep penetration of the incident ions to deptlis below that found in the nonnal, near Gaussian, depth distributions characterized by non-chaimelled energetic ions. Even today, implanted chaimelled... [Pg.1838]

Doolittle L R 1986 A semiautomatic algorithm for Rutherford backscattering analysis Nucl. Instrum. Methods B 15 227... [Pg.1849]

Rutherford Backscattering (RBS) provides quantitative, nondestructive elemental depth profiles with depth resolutions sufficient to satisfy many requirements however, it is generally restricted to the analysis of elements heavier than those in the substrate. The major reason for considering depth profiling using FIXE is to remove this restrictive condition and provide quantitative, nondestructive depth profiles for all elements yielding detectable characteristic X rays (i.e.,Z> 5 for Si(Li) detectors). [Pg.364]

Within the last 5—10 years PIXE, using protons and helium ions, has matured into a well-developed analysis technique with a variety of modes of operation. PIXE can provide quantitative, nondestructive, and fast analysis of essentially all elements. It is an ideal complement to other techniques (e.g., Rutherford backscattering) that are based on the spectroscopy of particles emitted during the interaction of MeV ion beams with the surface regions of materials, because... [Pg.367]

SALI compares fiivorably with other major surface analytical techniques in terms of sensitivity and spatial resolution. Its major advantj e is the combination of analytical versatility, ease of quantification, and sensitivity. Table 1 compares the analytical characteristics of SALI to four major surfiice spectroscopic techniques.These techniques can also be categorized by the chemical information they provide. Both SALI and SIMS (static mode only) can provide molecular fingerprint information via mass spectra that give mass peaks corresponding to structural units of the molecule, while XPS provides only short-range chemical information. XPS and static SIMS are often used to complement each other since XPS chemical speciation information is semiquantitative however, SALI molecular information can potentially be quantified direedy without correlation with another surface spectroscopic technique. AES and Rutherford Backscattering (RBS) provide primarily elemental information, and therefore yield litde structural informadon. The common detection limit refers to the sensitivity for nearly all elements that these techniques enjoy. [Pg.560]

As NRA is sensitive only to the nuclei present in the sample, it does not provide information on chemical bonding or microscopic structure. Hence, it is often used in conjunction with other techniques that do provide such information, such as ESCA, optical absorption. Auger, or electron microscopy. As NRA is used to detect mainly light nuclei, it complements another accelerator-based ion-beam technique, Rutherford backscattering (RBS), which is more sensitive to heavy nuclei than to light nuclei. [Pg.681]

Rutherford Backscattering Spectrometry High-Energy Ion Scattering... [Pg.768]

Rutherford backscattering (RBS) He 4He 30 nm heavy atoms jim — movement of markers... [Pg.363]

A variety of other techniques have been used to investigate ion transport in conducting polymers. The concentrations of ions in the polymer or the solution phase have been monitored by a variety of in situ and ex situ techniques,8 such as radiotracer studies,188 X-ray photoelectron spectroscopy (XPS),189 potentiometry,154 and Rutherford backscatter-ing.190 The probe-beam deflection method, in which changes in the density of the solution close to the polymer surface are monitored, provides valuable data on transient ion transport.191 Rotating-disk voltammetry, using an electroactive probe ion, provides very direct and reliable data, but its utility is very limited.156,19 193 Scanning electrochemical microscopy has also been used.194... [Pg.580]

Nitrogen content Raman spectroscopy Rutherford backscattering spectroscopy (RBS)... [Pg.152]


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Backscatter

Backscattered

Backscattering studies, Rutherford

High-resolution Rutherford backscattering

High-resolution Rutherford backscattering HRBS)

Principle of Rutherford Backscattering Spectroscopy

Quantitative Rutherford backscattering spectroscopy

Rutherford

Rutherford Backscatter Spectroscopy

Rutherford Backscattering (RBS)

Rutherford Backscattering Spectrometry (RBS)

Rutherford backscatter

Rutherford backscatter spectrometry

Rutherford backscattering analysis technique

Rutherford backscattering characteristics

Rutherford backscattering contacts

Rutherford backscattering depth profiling

Rutherford backscattering depth resolution

Rutherford backscattering electronic materials

Rutherford backscattering measurements

Rutherford backscattering quantitative elemental surface

Rutherford backscattering scattering

Rutherford backscattering spectra

Rutherford backscattering spectrometry

Rutherford backscattering spectrometry thin film

Rutherford backscattering spectroscop

Rutherford backscattering spectroscopy

Rutherford backscattering spectroscopy (RBS

Rutherford backscattering spectroscopy process

Rutherford backscattering spectroscopy thin films

Rutherford backscattering surface characterization

Rutherford backscattering theory

Rutherford backscattering thin-film analysis

Structure Rutherford backscattering spectroscopy

Surface analysis Rutherford backscatter spectroscopy

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