BACK-SCATTERING

Some discontinuities may be identified by a conventional two-dimensional ultrasonic technique, from which the well-known C-scan image is the most popular. The C-scan technique is relatively easy to implement and the results from several NDE studies have been very encouraging [1]. In the case of cylindrical specimens, a circular C-scan image is convenient to show discontinuity information. The circular C-scan image shows the peak amplitude of a back-scattered pulse received in the circular array. The axial scan direction is shown as a function of transducer position in the circular array. The circular C-scan image serves also as an initial step for choosing circular B-scan profiles. The latter provides a mapping between distance to the discontinuity and transducer position in the circular array. 

In back-scattering, (n= - n ), and within the Bom approximation (mono-scattering), the asymptotic solution of (2) is ... 

In space-frequency domain, the back-scattering transfer function is given by ... 

The goal of URT is to obtain reflectivity images from back-scattered measurements. This consists in a Fourier synthesis problem, and the first task is to correctly cover the frequency space of the "object" r. Let for simplicity the dimension of the physical space be 2. 

HEED High-energy electron diffraction [104] Diffraction of elastically back-scattered electrons (-20 keV, grazing incidence) Surface structure... 

Application High-resolution signal (TEM, STEM) Back-scattering of electrons (BSE signal in SEM) Analytical signal (TEM, STEM, SEM) Emission of secondary electrons (SE signal in SEM)... 

Electron Beam Techniques. One of the most powerful tools in VLSI technology is the scanning electron microscope (sem) (see Microscopy). A sem is typically used in three modes secondary electron detection, back-scattered electron detection, and x-ray fluorescence (xrf). AH three techniques can be used for nondestmctive analysis of a VLSI wafer, where the sample does not have to be destroyed for sample preparation or by analysis, if the sem is equipped to accept large wafer-sized samples and the electron beam is used at low (ca 1 keV) energy to preserve the functional integrity of the circuitry. Samples that do not diffuse the charge produced by the electron beam, such as insulators, require special sample preparation. 

These samples were measured non-destructively by energy-dispersive XRF with synclirotron radiation excitation (SYXRS), by g-XRF, by wavelength-dispersive XRF (WDXRS), and by Rutherford back scattering (RBS), by X-ray reflectometry (XRR) and by destructive secondary ion mass spectrometry (SIMS) as well (both last methods were used for independant comparison). 

REELS will continue to be an important surface analytical tool having special features, such as very high surface sensitivity over lateral distances of the order of a few pm and a lateral resolution that is uniquely immune from back scattered electron effects that degrade the lateral resolution of SAM, SEM and EDS. Its universal availability on all types of electron-excited Auger spectrometers is appealing. However in its high-intensity VEELS-form spectral overlap problems prevent widespread application of REELS. 

Future trends will include studies of grain-dependent surface adsorption phenomena, such as gas-solid reactions and surface segregation. More frequent use of the element-specific CEELS version of REELM to complement SAM in probing the conduction-band density of states should occur. As commercially available SAM instruments improve their spot sizes, especially at low Eq with field emission sources, REELM will be possible at lateral resolutions approaching 10 nm without back scattered electron problems. 

Metastable quenching spectroscopy Nuclear Reaction Analysis Rutherford back-scattering spectroscopy (or HEIS high-energy ion scattering)... 

Older experimental arrangements used Earaday cups with small apertures mounted on goniometers, which could be moved around the sample to collect the back-scattered electron current directly, or spot photometers, which were directed at one dif-... 

Rutherford back-scattering spectroscopy (RBS) is one of the most frequently used techniques for quantitative analysis of composition, thickness, and depth profiles of thin solid films or solid samples near the surface region. It has been in use since the nineteen-sixties and has since evolved into a major materials-characterization technique. The number and range of applications are enormous. Because of its quantitative feature, RBS often serves as a standard for other techniques. 

---