Rutherford backscattering spectroscopy RBS

Nitrogen content Raman spectroscopy Rutherford backscattering spectroscopy (RBS)... 

The use of nuclear techniques allows the determination of C, N, H, O, and heavier contaminants relative fractions with great accuracy, and of the elements depth profile with moderate resolution (typically 10 nm). Rutherford backscattering spectroscopy (RBS) of light ions (like alpha particles) is used for the determination of carbon and heavier elements. Hydrogen contents are measured by forward scattering of protons by incident alpha particles (ERDA) elastic recoil detection analysis [44,47]. 

Ion beam probes are used in a wide range of techniques, including Secondary Ion Mass Spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS) and proton-induced X-ray emission (PIXE). The applications of these and number of other uses of ion beam probes are discussed. 

Rutherford Backscattering Spectroscopy (RBS) can also give compositional information. It is a highly surface sensitive technique requiring specialized equipment and is best for samples containing elements with Z s that differ by several atomic numbers. The accuracy of RBS is controlled by counting statistics but is usually about 5%. 

Using various amines added to the ammonia bath (in most cases with added hydrazine), sphalerite ZnS fihns were obtained with a crystal size of ca. 3 nm [ 118]. Rutherford Backscattering Spectroscopy (RBS) analyses showed that there was about twice as much Zn in the fihns as S. (More basic solution and more hydrazine gave more stoichiometric films). Extended X-ray Absorption Fine Structure (EX-AFS) and Fourier Transform Infra-red (EUR) spectroscopy showed that the fihns did not have Zn-0 groups but rather Zn-OH ones [122] and that there is probably a mixture of ZnS and unreacted Zn(OH)2, quite likely as a ZnS shell around a Zn(OH)2 core. Optical spectra gave a bandgap of ca. 3.85 eV, considerably blue-shifted from the bulk value of 3.6 eV, as expected from such small crystals. 

It was also revealed that Tm3+ ions doped in GaN QDs embedded in AIN layer are partially located in the GaN QDs and partially at the GaN/AIN interface by means of structural characterizations such as EXAFS and Rutherford backscattering spectroscopy (RBS) (Andreev et al., 2005a). Consistently, CL spectra (fig. 21) can be well interpreted by assuming that Tm3+ is located inside QDs but also in the surrounding AIN spacer. (1) Intense sharp emission lines from the 1le, JD2, and1G4 levels of Tm3+ in the blue-green region (450-550 nm), which were absent for the Tm-doped GaN thick layer, were observed in the PL spectrum (fig. 21b). This provides clear evidence for Tm3+ ions located in QDs. (2) Compared to the PL spectrum, the CL spectrum of the same GaN Tm QD sample (fig. 21c) shows additional sharp lines which coincide with those of the CL spectrum of AIN (fig. 2Id). Thus it confirms that Tm3+ ions are also present in the AIN barrier layer. 

Rutherford Backscattering Spectroscopy (RBS) is an established technique for analysis of inorganic materials. Recently, several applications of RBS on polymer films have been reported however, the effect of ion beams on these surfaces has not been well documented. RBS has been used to determine fluorine distribution in polymers. Since ion beam irradiation of polymers can induce chemical changes, instrumental parameters need to be optimized to minimize damage. 

Sample preparation. Thin films of PBTMSS for Rutherford backscattering spectroscopy (RBS) and general plasma etching studies were spun on polished silicon wafers from a 3.5% solution in chlorobenzene using a photoresist spinner. The films were baked for 10 to 20 min. at 105-120 X in air. PBTMSS films for Auger electron spectroscopy (AES) studies were spin-coated on silicon wafers previously coated with 2000 A of gold. Films for IR studies were spin-coated onto NaCl plates. 

The resuts described in the following correspond to Pd evaporated at a rate of about 2.10 at.cm. min on a sample maintained at room temperature. Whatever the system, the monolayer will be defined with respect to the number of metal atoms in the outer plane of the metallic substrate. The calibration of the evaporation rate of the source and/or the quantification of adlayers following metal on metal deposition is not straightforward. A good way to do it is to combine quantification results from in-situ techniques such as AES or XPS and a further absolute quantification by Rutherford Backscattering Spectroscopy (RBS). For absolute quantification, it is better to use polycrystalline samples in order to avoid any channeling effects during RBS measurements. 

Figure 19 Experimental arrangement for Rutherford backscattering spectroscopy (RBS) (top) and schematic of Rutherford backscattering from a solid composed of elements of mass A and B (bottom). (From Ref. 101.)...

Abstract This chapter discusses the basic principles of analytical methods based on positive ion beams from particle accelerators. The methods, namely, particle-induced X-ray emission (PIXE), Rutherford backscattering spectroscopy (RBS), and nuclear reaction analysis (NRA) are described in detail. Besides the underlying physical processes, methodical questions, analytical capabilities, and typical fields of application are also discussed. 

The combination of PIXE with Rutherford backscattering spectroscopy (RBS) analysis finds applications mainly in materials science (Ishii and Nakamura 1993). 

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