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Rutherford backscattering spectroscopy process

G. Ottaviani and M. Costato have investigated the process of compound formation at the platinum-silicon interface. Platinum films, 115, 205, 268 and 357 nm thick, were sputtered on Si(l 11) single crystals under hard vacuum. The interaction of the Pt and Si phases during isothermal annealing was followed using Rutherford backscattering spectroscopy of helium ions. [Pg.108]

Abstract This chapter discusses the basic principles of analytical methods based on positive ion beams from particle accelerators. The methods, namely, particle-induced X-ray emission (PIXE), Rutherford backscattering spectroscopy (RBS), and nuclear reaction analysis (NRA) are described in detail. Besides the underlying physical processes, methodical questions, analytical capabilities, and typical fields of application are also discussed. [Pg.1697]

See other pages where Rutherford backscattering spectroscopy process is mentioned: [Pg.162]    [Pg.231]    [Pg.336]    [Pg.463]    [Pg.222]    [Pg.688]    [Pg.720]    [Pg.70]    [Pg.48]    [Pg.50]    [Pg.200]    [Pg.344]    [Pg.3]    [Pg.119]    [Pg.65]    [Pg.104]    [Pg.112]    [Pg.4640]    [Pg.4641]    [Pg.615]    [Pg.269]    [Pg.722]    [Pg.293]   
See also in sourсe #XX -- [ Pg.19 ]



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