Rutherford backscattering depth profiling

Rutherford Backscattering (RBS) provides quantitative, nondestructive elemental depth profiles with depth resolutions sufficient to satisfy many requirements however, it is generally restricted to the analysis of elements heavier than those in the substrate. The major reason for considering depth profiling using FIXE is to remove this restrictive condition and provide quantitative, nondestructive depth profiles for all elements yielding detectable characteristic X rays (i.e.,Z> 5 for Si(Li) detectors). 

Rutherford Backscattering Spectrometry (RBS) in-depth concentration profiles were determined by Rutherford backscattering spectrometry by using a 2.2 MeV He beam at INFN-Legnaro National Laboratories, Legnaro-Padova (Italy). 

The use of nuclear techniques allows the determination of C, N, H, O, and heavier contaminants relative fractions with great accuracy, and of the elements depth profile with moderate resolution (typically 10 nm). Rutherford backscattering spectroscopy (RBS) of light ions (like alpha particles) is used for the determination of carbon and heavier elements. Hydrogen contents are measured by forward scattering of protons by incident alpha particles (ERDA) elastic recoil detection analysis [44,47]. 

Rutherford backscattering is an important method for determining the composition and structure of surfaces and thin films. In Figure 13.8, we show the results of an RBS measurement with 2.0-MeV 4He incident on an Si surface with a Co impurity that was diffused into the bulk material. One can clearly detect the Co and its depth profile. 

Rutherford Backscattering is a valuable tool to get quasi-non-destructive depth profiles of thin films on surfaces. According to their high primary energy, He2+ ions... 

Rutherford backscattering RBS Similar to ISS, except the main focus is on depth profiling and Composition... 

Unless non-destructive Rutherford backscattering spectrometry is used [84, 85], only composition information of a single film or of a multilayer system on a substrate can be obtained by destructive profiling techniques. Depth profiling can be performed with various techniques and in various ways depending on the total thickness profile which has to be analyzed [86,87, 88]. 

X-ray analysis, including Rutherford backscattering, to understand the crystal structure and to obtain elemental depth profiles, to gain insight into the conductivity mechanism. 

Rutherford backscattering RBS > 1 pm Depth profile High Scattering Equipment cost 101 104... 

The most commonly used accelerator-based techniques for depth profiling are Rutherford Backscattering (RBS) which will be discussed in Chap. 2, Elastic Recoil Detection (ERD) which will be discussed in Chap. 3, and Nuclear Reaction Analysis (NRA) which will be discussed in Chap. 7. PIXE analysis has the advantage of a very good sensitivity and possible simultaneous detection of all heavier elements. 

There are three approaches for a subnanometer depth resolution [223] (1) Use of extremely low energies down to 100 eV. Although this generally increases the depth resolution and produces, for instance, profiles of As or P implants that resemble results from HR Rutherford backscattering spectrometry (RBS), the main drawbacks are a small ion current with bad focus-ability and a low sputter yield that can lead to erosion... 

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