Rutherford backscattering scattering

Taglauer E 1997 Low-energy Ion scattering and Rutherford backscattering Surface Analysis The Principal Techniques ed J C VIckerman (Chichester Wiley) pp 215-66... 

B1.24 Rutherford backscattering, resonance scattering, PIXE and forward (recoil) scattering... 

Rutherford backscattering spectrometry is the measurement of the energies of ions scattered back from the surface and the outer microns (1 micron = 1 pm) of a sample. Typically, helium ions with energies around 2 MeV are used and the sample is a metal coated silicon wafer that has been ion implanted with about a... 

This overview covers the major teclnhques used in materials analysis with MeV ion beams Rutherford backscattering, chaimelling, resonance scattering, forward recoil scattering, PIXE and microbeams. We have not covered nuclear reaction analysis (NRA), because it applies to special incident-ion-target-atom combinations and is a topic of its own [1, 2]. 

Rutherford Backscattering Spectrometry High-Energy Ion Scattering... 

The use of nuclear techniques allows the determination of C, N, H, O, and heavier contaminants relative fractions with great accuracy, and of the elements depth profile with moderate resolution (typically 10 nm). Rutherford backscattering spectroscopy (RBS) of light ions (like alpha particles) is used for the determination of carbon and heavier elements. Hydrogen contents are measured by forward scattering of protons by incident alpha particles (ERDA) elastic recoil detection analysis [44,47]. 

Rutherford backscattering spectrometry (RBS) which analyses the elastic scattering of the particle beam from the target nuclei. Most RBS analyses use less than 2.2 MeV He++ beams. 

Campos, F. J., et al., Confocal Micro-Raman Scattering and Rutherford Backscattering Characterization of Fattice Damage in Aluminum-Implanted 6H-SiC, Diamond and Related Materials, Vol. 9, 1999, pp. 357-360. 

Figure 13.8 Rutherford backscattering for 2.0 MeV 4He ions incident on a Si (Co) sample. Dots represent the experimental data while the solid line is a simulated spectrum. Scattering angle = 170°, with 0i = 02 = 5°. [From Saarilahti and Rauhala (1992).]...

Figure 1. A Rutherford backscattering spectrum for a thin (40/ig/cm2) MoSt sputter-deposited film. Conditions 4He ions normally incident at 3.0 MeV, and scattered ions detected at a 135° angle by a surface-barrier diode detector. Note the scale factor for other than the Mo peak and the Si substrate. The sample layer configuration is indicated at the upper left.

Rutherford Back-scattering Spectroscopy Elemental analysis, profiling He+ 2meV Backscattered ion He-U 10-1-10-4... 

Ions Ion Scattering Mass Spectroscopy, Laser Microprobe Mass Analyzer, Rutherford Backscattering Spectroscopy, Secondary Ion Mass Spectroscopy. 

Techniques based on the interaction of ions with solids, such as secondary ion mass spectrometry (SIMS) and low-energy ion scattering (LEIS) have undoubtedly been accepted in catalyst characterization, but are by no means as widely applied as for example X-ray photoelectron spectroscopy (XPS) or X-ray diffraction (XRD). Nevertheless, SIMS, with its unsurpassed sensitivity for many elements, may yield unique information on whether or not elements on a surface are in contact with each other. LEIS is a surface technique with true outer layer sensitivity, and is highly useful for determining to what extent a support is covered by the catalytic material. Rutherford backscattering (RBS) is less suitable for studying catalysts, but is indispensable for determining concentrations in model systems, where the catalytically active material is present in monolayer (ML)-like quantities on the surface of a flat model support. 

Fig. 4.14 Schematic representation of Rutherford backscattering (RBS). (a) The incident ions are directed such that they either scatter back from surface atoms or channel deeply into the crystal, (b) The ions scatter back from target atoms throughout the outer micrometers and suffer inelastic losses, causing the energy of the backscattered ions to tail to zero, (c) Scattering from the heavy outer layer gives a sharp peak separated from the spectrum of the substrate as in (b).

In situ methods permit the examination of the surface in its electrolytic environment with application of the electrode potential of choice. Usually they are favored for the study of surface layers. Spectroscopic methods working in the ultra high vacuum (UHV) are a valuable alternative. Their detailed information about the chemical composition of surface films makes them an almost inevitable tool for electrochemical research and corrosion studies. Methods like X-ray Photoelectron Spectroscopy (XPS), UV Photoelectron Spectroscopy (UPS), Auger Electron Spectroscopy (AES) and the Ion Spectroscopies as Ion Scattering Spectroscopy (ISS) and Rutherford Backscattering (RBS) have been applied to metal surfaces to study corrosion and passivity. 

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