Deposited layers

Autodopiag occurs whea dopants are unintentionally released from a substrate through diffusion and evaporation, and subsequently reiacorporated during the deposition layer. Epitaxial layers are typically doped at concentrations of lO " -10 atoms/cm. The higher levels of doping are used in bipolar technology where the epilayer forms the transistor base. The epitaxial layer can be up to several hundred micrometers, and as thin as 0.05—0.5 p.m. Uniformities of 5% are common. 

Metallization layers are generally deposited either by CVD or by physical vapor deposition methods such as evaporation (qv) or sputtering. In recent years sputter deposition has become the predominant technique for aluminum metallization. Energetic ions are used to bombard a target such as soHd aluminum to release atoms that subsequentiy condense on the desired substrate surface. The quaUty of the deposited layers depends on the cleanliness and efficiency of the vacuum systems used in the process. The mass deposited per unit area can be calculated using the cosine law of deposition ... 

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. 

Copper Sulfide—Cadmium Sulfide. This thin-film solar cell was used in early aerospace experiments dating back to 1955. The Cu S band gap is ca 1.2 eV. Various methods of fabricating thin-film solar cells from Cu S/CdS materials exist. The most common method is based on a simple process of serially overcoating a metal substrate, eg, copper (16). The substrate first is coated with zinc which serves as an ohmic contact between the copper and a 30-p.m thick, vapor-deposited layer of polycrystaUine CdS. A layer is then formed on the CdS base by dipping the unit into hot cuprous chloride, followed by heat-treating it in air. A heterojunction then exists between the CdS and Cu S layers. 

Figure 4.3 A 304 stainless steel plate from a storage tank floor, which pitted beneath a deposit layer.

Figure 4.4 Corrosion product mounds covering localized areas of metal loss on an aluminum heat exchanger tube. Attack initiated beneath a thin deposit layer.

Ferrous sulfate was added to the condenser in hopes of retarding attack. A thick, tan deposit layer rapidly formed on tubes near inlets (Fig. 4.24). Corrosion continued unabated. Underdeposit corrosion caused localized areas of metal loss (Fig. 4.25). Corrosion product mounds contained up to 10% chloride. 

A duplex heat exchanger tube containing a single small perforation was examined. Perforation occurred due to internal surface wastage beneath a deposit layer containing large concentrations of sulfur compounds (Fig. 4.28). 

Internal surfaces of all tubes were severely attacked (Fig. 4.29). A brown deposit layer consisting of magnetite, iron oxide hydroxide, and silica covered all surfaces. Deposition was thicker and more tenacious along the bottom of tubes. These deposits had a distinct greenish-blue cast caused by copper corrosion products beneath the deposit. Underlying corrosion products were ruby-red cuprous oxide crystals (Fig. 4.29). Areas not covered with deposits suffered only superficial attack, but below deposits wastage was severe. 

Pitting can occur when normally protective corrosion-product or deposit layers are locally breached. Localized attack occurs during upsets or when protracted idle periods change water conditions abruptly. Regions adjacent to localized corrosion sites often remain... 

Two sections of steel condenser tubing experienced considerable metal loss from internal surfaces. An old section contained a perforation the newer section had not failed. A stratified oxide and deposit layer overlaid all internal surfaces (Fig. 5.14). Corrosion was severe along a longitudinal weld seam in the older section (Fig. 5.15). Differential oxygen concentration cells operated beneath the heavy accumulation of corrosion products and deposits. The older tube perforated along a weld seam. 

Internal surfaces were covered with a tan deposit layer up to 0.033 in. (0.084 cm) thick. The deposits were analyzed by energy-dispersive spectroscopy and were found to contain 24% calcium, 17% silicon, 16% zinc, 11% phosphorus, 7% magnesium, 2% each sodium, iron, and sulfur, 1% manganese, and 18% carbonate by weight. The porous corrosion product shown in Fig. 13.11B contained 93% copper, 3% zinc, 3% tin, and 1% iron. Traces of sulfur and aluminum were also found. Near external surfaces, up to 27% of the corrosion product was sulfur. 

D can be regarded as a constant of the system in this experiment since drere is no change of chemical composition involved in tire exchange of radioactive and stable isotopes between the sample and the deposited layer. The solution of this equation with these boundaty conditions is... 

Included in this class of thin surface films are oxides, corrosion, contamination, and deposited layers. Although the presence of the bulk specimen results in increased... 

The LB technique was chosen for covering the spheres because it was shown to provide enhanced thermal stability of many types of proteins in deposited layers (Nicolini et al. 1993, Erokhin et al. 1995, Antolini et al. 1995), which no other technique is able to achieve. Since only the upper protein layer is involved in the catalytic activity, no special attention was paid to check whether the deposited layer is a monolayer or multilayer. However, the samples were thoroughly washed to remove protein molecnles not bound covalently to the sphere surface, since during the functional test these molecules could contribute to the measured apparent catalytic activity. 

Comparative study of LB films of cytochrome P450 wild type and recombinant revealed similar surface-active properties of the samples. CD spectra have shown that the secondary structure of these proteins is practically identical. Improved thermal stability is also similar for LB films built up from these proteins. Marked differences for LB films of wild type and recombinant protein were observed in surface density and the thickness of the deposited layer. These differences can be explained by improved purity of the recombinant sample. In fact, impurity can disturb layer formation, preventing closest packing and diminishing the surface density and the average monolayer thickness. Decreased purity of... 

Permeation measurements were conducted on the Pd and Pd-Ag/PSS membranes at elevated temperature (623 K to 873 K) and pressures (up to 1 MPa). Surfece morphology of the deposited layer was observed with a scanning electron microscope (SEM, S3(K)0N, HITACHI Co.) equipped with an energy dispersive spectrometer (EDS, HORIBA Co.). 

Ultrathin films of CdS ranging in coverage from 25 to 200 ML were grown also by the previous method on Au substrates (of non-specified nature) and were characterized by quantitative Raman resonance [41], It was found that the electronic structure of the films in this coverage regime corresponds to that of bulk CdS. It was concluded also that ECALE does not involve growth by random precipitation of CdS onto the Au surface the thin deposited layers of the material were contiguous. 

During this process, material is selectively removed from the wafer surface as defined by the patterned photoresist in order to define the structure of the previously deposited layer. The etching process is accomplished by exposing the wafer to a plasma, which both chemically reacts with the material to be removed and ph3rslcally ablates it. At the completion of etching, the remaining photoresist is cleared from the wafer. 

After formation of a primary deposit layer on foreign substrates, further layer growth will follow the laws of metal deposition on the metal itself. But when the current is interrapted even briefly, the surface of the metal already deposited will become passivated, and when the current is turned back on, difficulties will again arise in the formation of first nuclei, exactly as at the start of deposition on a foreign substrate (see Section 14.5.3). This passivation is caused by the adsorption of organic additives or contaminants from the solution. Careful prepurification of the solution can prolong the delay with which this passivation will develop. 

Low contamination levels are readily achieved in laboratory scale UHV systems. Very high costs inhibit the use of UHV in industrial scale systems, however, so another, local-UHV approach has been proposed, viz. the plasma box reactor [152]. The substrate is mounted in a box, which is surrounded by a shell, which is pumped to a low pressure. The process pressure in the box is maintained by a throttle valve. As the pressure in the box is larger than the pressure in the surrounding shell, contaminants diffuse outwards and the incorporation of contaminants in the deposited layer is low. 

The in-line configuration consists of deposition chambers that are separated by isolation chambers [153]. The layer sequence of a solar cell structure prescribes the actual sequence of deposition chambers. The flexibility is much less than with a cluster configuration, and costs are generally much higher, but the throughput can also be much larger. In an in-line system the substrates can move while deposition takes place, which leads to very uniformly deposited layers, as uniformity of deposition is required only in one dimension (perpendicular to the moving direction). 

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