Base, transistor

Polythiophene can be synthesized by electrochemical polymerization or chemical oxidation of the monomer. A large number of substituted polythiophenes have been prepared, with the properties of the polymer depending on the nature of the substituent group. Oligomers of polythiophene such as (a-sexithienyl thiophene) can be prepared by oxidative linking of smaller thiophene units (33). These oligomers can be sublimed in vacuum to create polymer thin films for use in organic-based transistors. 

The poly(I)-based transistor is the first illustration of a microelectrochemical transistor based on a combination of a conducting and a conventional redox polymer as the active material. The transistor "turns on" at VG corresponding to oxidation of the polythiophene backbone. The resistivity of poly(I) declines by a factor of 105 upon changing VG from 0.4 V to 0.8 V vs. Ag+/Ag. When Vg is moved close to the one-electron reduction potential of V2+/+, the conventional redox conductivity gives a small degree of "turn on". A sharp Iq-Vq characteristic results, with an Ip(peak) at Vq = E° (V2+/+). Though the microelectrochemical devices based on conventional redox conduction have both slow switching speed and a... 

Single molecule Cgo based transistors were also fabricated by depositing a diluted Cgo toluene solution onto a pair of gold electrodes. The whole structure was built on an insulating Si02 layer on top of a doped Si wafer that was used as the gate electrode to modulate the electrostatic potential of the Cgo molecule trapped in the middle of the junction (see Fig. 14). The observed 1-V characteristics were... 

Fig. 21 Operation of a SWCNT based transistor in the microwave frequency range. (Reprinted with permission from [179])...

D. M. de Leeuw, M. Muccini, K. Mullen, Electrical characterization of organic based transistors stability issues, Polym. Adv. Technol. 2005, 16, 227-231. 

C4.1 General remarks on GaN-based transistors and potential for high temperature/power operation C4.2 GaN FET structures MESFET, MISFET, JFET and MODFET... 

F. Capasso, F. Beltram, S. Sen, A. Pahlevi, and A. Y Cho, Quantum Electron Devices Physics and Applications P. Solomon, D. J. Frank, S. L. Wright and F. Canora, GaAs-Gate Semiconductor-Insulator- Semiconductor FET M. H. Hasherrd and U. K. Mishra, Unipolar InP-Based Transistors... 

The emitter current IE is not independent of the collector voltage Vc -Figure 9.23 shows that Vc affects the thickness of the base-to-collector junction and thus influences the diffusion time for currents to cross the base. Transistor designers wish to bring the ratio Ic/h as close to unity as possible. Four factors tend to make h differ from IE ... 

The market price of a device is governed by the costs of its subunits. Shortly after the invention of germanium-based transistors in the late 1940s, the price of... 

The success in the development of CNT-based elements for nanoelectronics can be achieved when one is able to produce CNT with controllable properties, deposit them on different surfaces and manipulate along the substrate towards the desirable electrode pair with the proper control of the electric contact between CNT and electrodes. We have fabricated samples of nanovaristors and nanotransistors [4] based on CNT and carbon stripes. Their electric behavior has been studied at high temperatures (up to 125°C) and radiation fields up to 1.1610 rad. CNT based transistors can be applied in high sensitive miniaturized... 

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