Self-limiting processes atomic layer deposition

Atomic layer epitaxy (electrochemical) — Electrochemical atomic layer epitaxy (ECALE) is a self-limiting process for the formation of structurally well-ordered thin film materials. It was introduced by Stickney and coworkers [i] for the layer by layer growth of compound semiconductors (CdTe, etc.). Thin layers of compound semiconductors can be formed by alternating - underpotential deposition steps of the individual elements. The total number of steps determines the final thickness of the layer. Compared to flux-limited techniques... 

UPD is a self limiting process. Deposition is terminated as soon as a complete monolayer has been formed. This statement should be qualified. There are a few cases reported in the literature where more than a monolayer is formed, but rarely more than two atomic layers. However, even in such cases, the process is self-limiting... 

ALD is a cyclic, self-limiting gas-solid surface reaction process that allows films to be grown one atomic layer at a time. A classical ALD reaction scheme for the deposition of AI2O3 is shown in Figure 5.12. The deposition process consists of two distinct reaction steps that are repeatedly cycled to build up the AI2O3 film layer by layer ... 

Immersion Au is a displacement deposition. In an immersion Au bath, Au ions receive electrons supplied from Ni atoms on the substrate. As a result, Ni atoms become ions and dissolve into the bath, and Au ions become atoms and deposit on the substrate. The electron exchange is determined by the standard electrode potential. In theory, the deposition by an immersion process is self-limiting once the Ni surface is covered with an atomic layer of Au, the deposition stops because the Au ions in the bath and the Ni atoms on the substrate are no longer in contact. In reality, the thickness of immersion Au is approximately 0.1 pm. When the immer-... 

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