Electrochemical atomic layer deposition

Vaidyanathan R, Cox SM, Happek U, Banga D, Mathe MK, Stickney JL (2006) Preliminary studies in the electrodeposition of PbSe/PbTe superlattice thin films via electrochemical Atomic Layer Deposition (ALD). Langmuir 22 10590-10595... 

The electrochemical atomic layer epitaxy (ECALE) technique, also known as electrochemical atomic layer deposition (EC-ALD), is based on layer-by-layer electrodeposition. Each constituent of the thin him are deposited separately using underpotential deposition (UPD) of that element. UPD is a process wherein an atomic layer of one element is deposited on the surface of a different element at a potential under that needed to deposit the element on itself. ECALE has been used to grow mainly II-VI and III-V compounds. A thorough review of ECALE research has been published by Stickney.144 A summary of the materials deposited using ECALE are given in Table 8.4, with a more detailed discussion for a few select examples given below. 

ZnSe thin films were also deposited on glass substrates by the chemical hath deposition (CBD) method using method using zinc sulfate, sodiumselenosulfate, hydrazine hydrate, ammonia as precursors. The slow release of zinc ions (Zn ) and selenide ions (Se ) in the reaction solution facilitated the condensation of the ions on the substrate. The films were composed of spherical particles with a zinc blende phase. The particle size was influenced by the hydrazine hydrate concentration or zinc sulfate concentration. The electrochemical atomic layer deposition (EC-ALD) method was used to deposit ZnSe nanometer films on a multicarbon nanotubes/polyvinyl alcohol (CNTs/PVA) membrane. The morphology of the films varied with the ratio of the zinc to selenium. 

Liang X, Zhang Q, Lay MD, Stickney JL (2011) Growth of Ge nanofilms using electrochemical atomic layer deposition, with a bait and switch surface-limited reaction. J Am Chem Soc 133(21) 8199-8204. doi 10.1021/jal09398t... 

This entry describes the electrodeposition of nanofihns using atomic layer deposition (ALD) [1]. ALD is the formation of nanofilms of materials one atomic layer at a time using surface limited reactions (SLRs). SLRs occur only at the surface, and once the surface is covered, the reaction stops. Electrochemical atomic layer deposition (E-ALD) is the electrochemical form of ALD, though it has also been referred to as electrochemical atomic layer epitaxy (EC-ALE) [2, 3], EC-ALD, ECALE, and ECALD. 

Semiconductors, Electrochemical Atomic Layer Deposition (E-ALD), Fig. 2 STM images (a) Au vapor deposited on glass (b) 30 superlattice periods. 

Banga D, Stickney JL (2007) PbTe - PbSe superlattice formation by electrochemical atomic layer deposition. ECS Trans 6 (2, State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) and Processes at the Semiconduc-tor/Solution Interface 2) 439-449... 

Kim JY, Kim YG, Stickney JL (2008) Cu nanofilm formaumi by electrochemical atomic layer deposition (ALD) in the presence of chloride ions. J Electroanal Chem 621(2) 205-213... 

Venkatasamy, V., N. Jayaraju, S. M. Cox, C. Thambidurai, and J. L. Stickney. 2007. Studies of Hg, j) CdjTe formation by electrochemical atomic layer deposition and investigations into bandgap engineering. J. Electrochem. Soc. 154 H720-H725. 

Jayaraju, N., D. Vairavapandian, Y. G. Kim, D. Banga, and J. L. Stickney. 2012. Electrochemical atomic layer deposition (e-ALD) of Ptnanofihns using SLRR cycles. J. Electrochem. Soc. 159 D616-D622. 

Sheridan, L. B., D. K. Gebregziabiher, J. L. Stickney, and D. B. Robinson. 2013. Formation of palladium nanofilms using electrochemical atomic layer deposition (e-ALD) with chloride complexation. Langmuir 29 1592-1600. 

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