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Layer deposition

In an alternative procedure (84), the electrolyte is pumped through the cells at such a rate that the outlet concentration is 50 g/L MnSO and 67 g/L H2SO4. This spent electrolyte is then mixed with equal parts of make-up solution containing 150 g/L MnSO and the mixture returned to the electrolysis step. The electrolysis is continued over a period of days and terrninated when the EMD layer deposited on the anode reaches a specific thickness, usually on the order of 1—3 or 6—8 mm. Following completion of the electrolysis cycle, the entire electrode assembly is removed from the cell for removal of the deposited EMD, either manually or by an automated system (85). The product is repeatedly washed with water to extract the occluded acid (83) and dried at about 85°C in air. [Pg.514]

GIAB studies of sputtered thin films of different composition for tribological applications have been reported [4.157-4.159]. The technique has been used to study the structure of very thin GdS layers (deposited by chemical bath deposition) for photovoltaic applications in combination with 6-26 diffraction it enabled identification of their polytype structure [4.160]. Glancing angle diffraction in the GIAB geometry... [Pg.219]

A bulk sample is the last choice and the least desirable. It should be submitted "for laboratory use only" if there is a possibility of contamination by other matter. The type of bulk sample submitted to the laboratory should be cross-referenced to the appropriate air samples. A reported bulk sample analysis for quartz (or cristobalite) will be semi-quantitative in nature because (1) The XRD analysis procedure requires a thin layer deposition for an accurate analysis. (2) The error for bulk samples analyzed by XRD is unknown because the particle size of nonrespirable bulk samples varies from sample to sample. [Pg.253]

Figure 13-7. Principle of the UPS stud) of an organic/niclal interface, (a) Photoe mission from the metal (b) photoenris-sion from an organic layer deposited on llic metal surface. Reproduced from 111 Si with permission from Elsevier Science. Figure 13-7. Principle of the UPS stud) of an organic/niclal interface, (a) Photoe mission from the metal (b) photoenris-sion from an organic layer deposited on llic metal surface. Reproduced from 111 Si with permission from Elsevier Science.
A thin layer deposited between the electrode and the charge transport material can be used to modify the injection process. Some of these arc (relatively poor) conductors and should be viewed as electrode materials in their own right, for example the polymers polyaniline (PAni) [81-83] and polyethylenedioxythiophene (PEDT or PEDOT) [83, 841 heavily doped with anions to be intrinsically conducting. They have work functions of approximately 5.0 cV [75] and therefore are used as anode materials, typically on top of 1TO, which is present to provide lateral conductivity. Thin layers of transition metal oxide on ITO have also been shown [74J to have better injection properties than ITO itself. Again these materials (oxides of ruthenium, molybdenum or vanadium) have high work functions, but because of their low conductivity cannot be used alone as the electrode. [Pg.537]

Several patents dealing with the use of volatile metal amidinate complexes in MOCVD or ALD processes have appeared in the literature.The use of volatile amidinato complexes of Al, Ga, and In in the chemical vapor deposition of the respective nitrides has been reported. For example, [PhC(NPh)2]2GaMe was prepared in 68% yield from GaMes and N,N -diphenylbenzamidine in toluene. Various samples of this and related complexes could be heated to 600 °C in N2 to give GaN. A series of homoleptic metal amidinates of the general type [MIRCfNROilnl (R = Me, Bu R = Pr, BuO has been prepared for the transition metals Ti, V, Mn, Fe, Co, Ni, Cu, Ag, and La. The types of products are summarized in Scheme 226. The new compounds were found to have properties well-suited for use as precursors for atomic layer deposition (ALD) of thin films. [Pg.339]

There are four principal processes that may be used to manufacture the glass body that is drawn into today s optical fiber. "Outside" processes—outside vapor-phase oxidation and vertical axial deposition— produce layered deposits, of doped silica by varying the concentration of SiCl4 and dopants passing through a torch. The resulting "soot" of doped silica is deposited and partially sintered to form a porous silica boule. Next, the boule is sintered to a pore-free glass rod of exquisite purity and transparency. [Pg.56]

However, the layers deposited with this technique are rather thick and not well controllable in thickness. [Pg.162]

Sol-gel technique has been used to deposit solid electrolyte layers within the LSM cathode. The layer deposited near the cathode/electrolyte interface can provide ionic path for oxide ions, spreading reaction sites into the electrode. Deposition of YSZ or samaria-doped ceria (SDC, Smo.2Ceo.8O2) films in the pore surface of the cathode increased the area of TPB, resulting in a decrease of cathode polarization and increase of cell performance [15],... [Pg.79]

Atomic layer deposition of hafnium silicate thin films using... [Pg.373]

Vaidyanathan R, Cox SM, Happek U, Banga D, Mathe MK, Stickney JL (2006) Preliminary studies in the electrodeposition of PbSe/PbTe superlattice thin films via electrochemical Atomic Layer Deposition (ALD). Langmuir 22 10590-10595... [Pg.202]

Figure 2.52 2-D model of a counter-current heat-exchanger reactor with a nanoporous catalyst layer deposited on the channel wall. Figure 2.52 2-D model of a counter-current heat-exchanger reactor with a nanoporous catalyst layer deposited on the channel wall.
Figure 2.53 Normalized concentration profile of a reacting species across a micro channel of 500 pm width with a 100 pm catalyst layer deposited on the wall. Figure 2.53 Normalized concentration profile of a reacting species across a micro channel of 500 pm width with a 100 pm catalyst layer deposited on the wall.
Of the great number of possible and reported modifications, in this section only the most important ones are described, viz., the use of higher excitation frequency (VHF), the use of gas flow modulation (known as chemical annealing or layer-by-layer deposition), and the use of RF modulation. [Pg.139]


See other pages where Layer deposition is mentioned: [Pg.166]    [Pg.392]    [Pg.362]    [Pg.182]    [Pg.380]    [Pg.230]    [Pg.592]    [Pg.199]    [Pg.859]    [Pg.1228]    [Pg.1302]    [Pg.624]    [Pg.361]    [Pg.365]    [Pg.377]    [Pg.334]    [Pg.86]    [Pg.511]    [Pg.520]    [Pg.14]    [Pg.373]    [Pg.135]    [Pg.86]    [Pg.162]    [Pg.165]    [Pg.212]    [Pg.241]    [Pg.241]    [Pg.84]    [Pg.401]    [Pg.403]    [Pg.2]    [Pg.66]    [Pg.147]    [Pg.157]    [Pg.362]   


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Aqueous layer pollutants deposition

Atomic Layer Deposition of Metal oxides

Atomic layer deposition

Atomic layer deposition chemisorption

Atomic layer deposition metal oxides

Atomic layer deposition metals

Atomic layer deposition precursors

Atomic layer deposition procedure

Chemical layer deposition

Deposited gold layer

Deposited gold layer radius

Deposited layers

Deposited layers

Deposition of Thin Layers

Deposition protein layers

Deposition velocities boundary layer theory

Deposition, multi-layer

Deposition, silicon nitride layer

Direct layer deposition

Electrochemical atomic layer deposition

Electrophoretic deposition alumina layer

Electrophoretic deposition double-layers

Epitaxial deposition atomic layer

Hybridization atomic layer deposition

In-layer deposition

Interfacial polymerization thin layer deposition

Layer deposition Doctor blade

Layer deposition Langmuir-Blodgett

Layer deposition laser ablation

Layer deposition lifetime’ semiconductors

Layer deposition spin coating

Layered deposits

Migration of Eroded Materials and Layer Formation by Deposited Impurities

Molecular layer deposition process

Open atomic layer deposition

Oxide films atomic layer deposition

Plasma-enhanced atomic layer deposition

Polyelectrolyte layers uniform nanoparticle deposition

Pulsed layer deposition

Self-limiting processes atomic layer deposition

Space charge layer metal deposit

Sputter deposition layered structures

Surface layers preparation deposition

Surface layers preparation liquid phase deposition, coating

Surface layers preparation physical vapor deposition

Thin film growth atomic layer deposition

Thin film technology atomic layer deposition

Thin-layer deposition technology

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