Hybridization atomic layer deposition

Increased control of film composition, structure and size can be achieved by limiting the rate of reaction. This is possible using gas phase deposition where the amount of reactant is relatively low. Gas phase deposition loosely covers any hybridization strategy where at least one of the hybrid components is in the gas phase. This includes chemical vapor deposition (CVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) as well as various plasma, sputtering and evaporation processes. 

Room temperature deposition of silver on Pd(lOO) produces a rather sharp Ag/Pd interface [62]. The interaction with a palladium surface induces a shift of Ag 3d core levels to lower binding energies (up to 0.7 eV) while the Pd 3d level BE, is virtually unchanged. In the same time silver deposition alters the palladium valence band already at small silver coverage. Annealing of the Ag/Pd system at 520 K induces inter-diffusion of Ag and Pd atoms at all silver coverage. In the case when silver multilayer was deposited on the palladium surface, the layered silver transforms into a clustered structure slightly enriched with Pd atoms. A hybridization of the localized Pd 4d level and the silver sp-band produces virtual bound state at 2eV below the Fermi level. 

From the view point of the hybrid surface formation, NO + H2 reaction on Pt(llO) and Rh/Pt(110) surfaces are very interesting, because Pt(110) surface is poorly active compared to Pt(lOO) surface as shown in Fig. 4, that is, this reaction is a typical structure sensitive reaction. To compare the Rh/Pt(110) surface to Rh/Pt(100), we prepared Rh/Pt(110) surface by depositing Rh ions on a missing row p(lx2) Pt(l 10) surface. Rh deposited Pt(l 10) surface did not give any LEED spots because too thick Rli layer was deposited. Rli atoms were removed from... 

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