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Layer deposition lifetime’ semiconductors

Ru capping layers are now accepted within the semiconductor industry as a benchmark for the development and performance of other capping layers. They are by no means a perfect solution to the lifetime problem of EUV optics, since they also can be degraded through a combination of oxidation caused by the interaction of water vapor and EUV radiation, and carbon deposition associated... [Pg.727]

Ba " ", Cs, NH4", Ag" ") and anions (NOi j Cl , HCOi ). Solid-state ISEs (coated wire electrodes) have also been developed in which the sensitive membrane is coated directly onto a metal wire, usually a silver-silver halide. While these have the advantage of being small and easy to fabricate, they have been noted for their unpredictable properties and suffer from lifetime and stability problems. More sophisticated approaches involve the use of semiconductor planar fabrication technologies to deposit ion-sensitive layers onto semiconductor substrates to produce ion-selective field-effect transistors. These are conceptually very attractive but it has proven very difficult to produce devices as good as the equivalent ISE. [Pg.4356]


See other pages where Layer deposition lifetime’ semiconductors is mentioned: [Pg.10]    [Pg.494]    [Pg.170]    [Pg.320]    [Pg.327]    [Pg.61]    [Pg.397]    [Pg.578]    [Pg.322]    [Pg.242]    [Pg.124]    [Pg.285]    [Pg.603]    [Pg.129]   
See also in sourсe #XX -- [ Pg.278 ]




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