Chemical layer deposition

Currently, new advances in material science with application in the fabrication of biologically functional surface demand very sophisticated procedures for both preparation and characterization, including dry and wet chemical layers deposition and nano- and microfabrication [222]. While most biosensors are designed to work in mild conditions, the development of new devices for harsh environment is a necessity. However, whatever the final application of the biosensor device is, the electrode material used for their... 

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

Many attempts have been made to synthesi2e cubic BN at low pressures by some sort of chemical vapor deposition process in analogy with the low pressure deposition of diamond from methane in the presence of H atoms (see Diamond, synthetic). However, the amounts of cubic BN produced in this fashion in 1991 were miniscule, and were at best thin layers only a few do2en atoms thick (12). 

In the modified chemical vapor deposition (MCVD) technique, the reactants are deposited on the inside of a rotating siUca tube. The hoUow tube is heated from the outside by a moving oxyhydrogen torch. The oxide soot condenses onto the tube walls ahead of the burner, and the soot is then sintered into a glassy layer as the burner passes over it. When deposition is complete, the tube and its contents are collapsed to form a soHd preform rod. 

In plasma chemical vapor deposition (PCVD), the starting materials are typically SiCl, O2, 2 6 GeCl (see Plasma technology). Plasma chemical vapor deposition is similar to MCVD in that the reactants are carried into a hoUow siUca tube, but PCVD uses a moving microwave cavity rather than a torch. The plasma formed inside the microwave cavity results in the deposition of a compact glass layer along the inner wall of the tube. The temperatures involved in PCVD are lower than those in MCVD, and no oxide soots are formed. Also, the PCVD method is not affected by the heat capacities or thermal conductivities of the deposits. 

GIAB studies of sputtered thin films of different composition for tribological applications have been reported [4.157-4.159]. The technique has been used to study the structure of very thin GdS layers (deposited by chemical bath deposition) for photovoltaic applications in combination with 6-26 diffraction it enabled identification of their polytype structure [4.160]. Glancing angle diffraction in the GIAB geometry... 

If the rf source is applied to the analysis of conducting bulk samples its figures of merit are very similar to those of the dc source [4.208]. This is also shown by comparative depth-profile analyses of commercial coatings an steel [4.209, 4.210]. The capability of the rf source is, however, unsurpassed in the analysis of poorly or nonconducting materials, e.g. anodic alumina films [4.211], chemical vapor deposition (CVD)-coated tool steels [4.212], composite materials such as ceramic coated steel [4.213], coated glass surfaces [4.214], and polymer coatings [4.209, 4.215, 4.216]. These coatings are used for automotive body parts and consist of a number of distinct polymer layers on a metallic substrate. The total thickness of the paint layers is typically more than 100 pm. An example of a quantitative depth profile on prepainted metal-coated steel is shown as in Fig. 4.39. 

An MWCNT has inner concentric tube(s) with smaller diameter(s) inside its hollow, and it is normally prepared in the carbon electrode of the arc-discharging method or by chemical vapour deposition method (see Chaps. 2 and 12). Influence of such inner tubes on the most outer layer in MWCNT is of interest with respect to electronic similarity of MWCNT and SWCNT. 

Several patents dealing with the use of volatile metal amidinate complexes in MOCVD or ALD processes have appeared in the literature.The use of volatile amidinato complexes of Al, Ga, and In in the chemical vapor deposition of the respective nitrides has been reported. For example, [PhC(NPh)2]2GaMe was prepared in 68% yield from GaMes and N,N -diphenylbenzamidine in toluene. Various samples of this and related complexes could be heated to 600 °C in N2 to give GaN. A series of homoleptic metal amidinates of the general type [MIRCfNROilnl (R = Me, Bu R = Pr, BuO has been prepared for the transition metals Ti, V, Mn, Fe, Co, Ni, Cu, Ag, and La. The types of products are summarized in Scheme 226. The new compounds were found to have properties well-suited for use as precursors for atomic layer deposition (ALD) of thin films. 

Inside" processes—such as modified chemical vapor deposition (MCVD) and plasma chemical vapor deposition (PCVD)—deposit doped silica on the interior surface of a fused silica tube. In MCVD, the oxidation of the halide reactants is initiated by a flame that heats the outside of the tube (Figure 4.8). In PCVD, the reaction is initiated by a microwave plasma. More than a hundred different layers with different refractive indexes (a function of glass composition) may be deposited by either process before the tube is collapsed to form a glass rod. 

Cachet H, Esaaidi H, Froment M, Maurin G (1995) Chemical bath deposition of CdSe layers from Cd(II)-selenosulfite solutions. J Electroanal Chem 396 175-182... 

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