Thin-layer deposition technology

Puiso, J. 2004. Growth kinetics and properties of lead sulfide thin films deposited on crystalline silicon using successive ionic layer adsorption and reaction method. Ph.D. thesis. Kaunas University of Technology, Kaunas, Lithuania. 

Suntola T (1995) Atomic layer deposition (Handbook of Thin Film Process Technology), Institute of Physics, Bristol, B15 pp. 1-17... 

Kim H (2003) Atomic layer deposition of metal and nitride thin films. Current research efforts and applications for semiconductor device processing. Journal of Vacuum Science Technology B 21(6), 2231-2261... 

A.2 Semiconductor Device Fabrication. In this section we investigate the gas-phase synthesis of compounds, primarily semiconductors, that are preferentially deposited on a surface to form a layer called a thin film. This technology can be used to form structural and protective layers of materials described in the previous section, but is used primarily to form thin films from semiconductor materials for electronic devices. Recall from Figure 6.99, for example, that most semiconductor devices are made from layers of appropriately doped compounds. In order to fabricate these devices at ever smaller scales, the layers must be formed in a carefully controlled manner. This... 

Two notable technological developments related to the reagent handling system occurred in the late 1980s. One of these was the introduction of the dry slide reagent technology where the reagents needed for a particular assay are deposited in thin layers on a slide. 

The micromagnetic structure is directly related to the microstructure and chemical inhomogenities in the layer. The materials used and the deposition technology as well as the parameters play an important role. Thin-film growth, nudeation processes in relation to the deposition parameters, are very important for understanding the thin film microstructure. The relationships between sfd and recording properties are not necessarily valid for media with perpendicular anisotropy as the demagnetizing field can be more important than sfd. 

Thin semiconductor films (and other nanostructured materials) are widely used in many applications and, especially, in microelectronics. Current technological trends toward ultimate miniaturization of microelectronic devices require films as thin as less than 5 nm, that is, containing only several atomic layers [1]. Experimental deposition methods have been described in detail in recent reviews [2-7]. Common thin-film deposition techniques are subdivided into two main categories physical deposition and chemical deposition. Physical deposition techniques, such as evaporation, molecular beam epitaxy, or sputtering, involve no chemical surface reactions. In chemical deposition techniques, such as chemical vapor deposition (CVD) and its most important version, atomic layer deposition (ALD), chemical precursors are used to obtain chemical substances or their components deposited on the surface. 

To reduce expense, efforts are made to exploit integrated thin film technologies. For example, arrays have been produced via thin film deposition of the pyroelectric onto a sacrificial layer, e.g. a suitable metal or polysilicon, which is then selectively etched away. Thermal isolation of the pyroelectric element is achieved through engineering a gap between it and the ROIC silicon wafer. Yias in the supporting layer permit electrical connections to be made between the detector and the wafer via solder bonds. Imaging arrays have been produced in this way incorporating sputtered PST and sol-gel formed PZT films. 

---