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Sputtering-deposition

DEC coating was first prepared by Aisenberg and Chabot using ion beam deposition in 1971 [2]. At present, PVD, such as ion beam deposition, sputtering deposition, cathodic vacuum arc deposition, pulsed laser deposition, and CVD, like plasma enhanced chemical vapor deposition are the most popular methods to be selected to fabricate DEC coatings. [Pg.147]

Homogeneous deposition of ultrafine metal particles on the surfaces of fine powder is not easy using PVD. A device for stirring the powder support in a vacuum chamber is needed to avoid heterogeneous deposition. Sputter deposition units equipped with stirring powder supports have already been adapted for the industrial production of Ti02 and carbon-supported gold catalysts by 3M [35]. [Pg.58]

Thin-Film Deposition Physical Vapor Deposition (sputtering, pulsed laser)... [Pg.390]

Decoration painting, vacuum metallization by vapour deposition, sputtering, plating, dichroic coating give good results. [Pg.573]

Noncrystalline solids formation needs to be clarified by reference to the natnre of the final product. Several methods lead to amorphous fine particles, for instance, in solution by controlled precipitation. Through gel formation, poorly crystalline Ti02 can be obtained according to the process Ti(OR)4 -I- H2O Ti(OH)4 gel amorphous Ti02 + H2O. In this case, the compound obtained is thermodynamically stable, as when amorphous films are obtained by chemical vapor deposition, sputtering, flash evaporation, and so on. [Pg.3141]

Surface modification is a domain on its own. To suit certain purposes, dry surfaces can be changed by a number of techniques, such as ion bombardment, molecular beam deposition, sputtering (erosion as a result of bombardment with high-energy molecules), doping, coating or chemisorption. Let it be sufficient to note that, after modification, our techniques can be used to detect and analyse the incurred changes ). [Pg.143]

When tungsten is deposited by means of CVD there is almost no adhesion to dielectric materials like silicon dioxide and silicon nitride. To overcome this problem an adhesion promoting layer prior to the tungsten deposition is deposited. Sputtered films such as TiW and TiN have received the most attention [Ellwanger et al.7, Rana et al.8] and have proven to provide adequate adhesion. With respect to this it must be emphasized that macroscopic adhesion (Scotch tape test or bond pull test) in itself is not a valid proof of adhesion. The ultimate evidence can only be obtained when... [Pg.12]

Boyd, A.R., Rutledge, L., Randolph, L.D., and Meenan, B.J. (2015) Strontium-substituted hydroxyapatite coatings deposited via a co-deposition sputter technique. Mater. [Pg.230]

Last years considerable efforts have been directed to preparation of metal nanoparticles having a desired diameter and shape. A number of production techniques has been reported such as wet chemical processes, (co-precipitation, complexation, sol-gel), physical vapor deposition, sputtering, and laser ablation methods [1]. The ultimate goal of each technique is fabrication of monodisperse stmctures with a predetermined size, shape and arrangement. [Pg.163]

As the base material for MEMS technologies. Si is also the most common material encountered in MEMS-based FC. Its properties and the micro-fabrication techniques associated to it such as photolithography, wet or dry etching, depositing (sputtering, CVD, thermal oxidation, etc.) are now well known and mastered. Another advantage of Si-based FC may also be to facilitate the possible integration of the FC with other electronic devices on the same chip. [Pg.125]

As described above, even though there are many types of dry processes, univer-salistic dry processes are restricted to certain ones at this point vacuum deposition, sputtering and ion plating (examples of the PVD process) and many kinds of CVD processes. General descriptions of them are provided. [Pg.284]

Although they have not yet been applied to the production and screening of photoelectrolysis materials, we will briefly mention some other approaches to produce metal oxide libraries using well-established thin film deposition techniques (meant here to include physical vapor deposition, sputtering, pulsed laser deposition, and molecular beam epitaxy). These techniques have been used for the production of combinatorial metal oxide libraries in the search for more effective luminescent materials [90,91], transparent conducting oxides [92,93], and dielectrics [94,95]. It would presumably be straightforward to apply the same techniques to the production of material libraries to be screened for photoelectrolysis activity. [Pg.195]


See other pages where Sputtering-deposition is mentioned: [Pg.517]    [Pg.435]    [Pg.445]    [Pg.642]    [Pg.375]    [Pg.218]    [Pg.116]    [Pg.517]    [Pg.245]    [Pg.224]    [Pg.240]    [Pg.465]    [Pg.336]    [Pg.323]    [Pg.97]    [Pg.245]    [Pg.214]    [Pg.75]    [Pg.77]    [Pg.281]    [Pg.219]    [Pg.548]    [Pg.352]    [Pg.113]    [Pg.164]    [Pg.437]    [Pg.44]    [Pg.352]    [Pg.258]    [Pg.3068]    [Pg.284]    [Pg.4359]    [Pg.13]    [Pg.93]    [Pg.356]    [Pg.521]   
See also in sourсe #XX -- [ Pg.15 ]

See also in sourсe #XX -- [ Pg.25 ]

See also in sourсe #XX -- [ Pg.15 ]




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Sputtered

Sputtering

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