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Arsenide

Arsenides. The crystal structure of Nb4As3 has been determined. It consists of a complicated arrangement of Nb As prisms, with one additional Nb in a cubic hole, and one additional As atom situated in another hole between the [Pg.62]

Arsenides.—Some indications of the complexity of binary arsenide structures are apparent from recent X-ray investigations. In the new intermetallic compound Ca2As3, As4 and Asg chains are present in a 1 1 ratio, with As—As distances ranging between 2.47 and 2.58 As units occur in the simple arsenide CaAs, which has an anti-NiAs structure, and here the As—As separation is 2.563 The ternary arsenides CasGa2As6 and Ca4Ga3Ass have also been synthesized, the structure of the former containing layers of Ca—As octahedra and tetrahedra. As expected from valence considerations, As2 units are present [Pg.220]

Crystal structures have been reported for the and y modifications of VsAsa and CrsAsa and for NbaAs. Complete solid solubility has been found in the CrP-CrAs, CrAs-CoAs, and FeAs-CoAs systems, with the phosphorus and arsenic atoms randomly arranged in a MnP-type structure. [Pg.221]

Arsenic and bismuth vapours, at elevated temperatures, produce insertion-type bronze phases on interaction with [Pg.221]

So far two technetium arsenides, TcjAsy and TC2AS3, have been synthesized upon reacting the powdered elements in various ratios at 600-900 C and annealing the samples at 900 to 950 C. [Pg.107]

TC3AS7 is reported to crystallize in the cubic structure with the lattice constant =8.702 A and to be isostructural with RC3AS7, which is diamagnetic and shows non-mctallic behavior. From density measurements the unit cell of Rc3As7 was found to contain four formula units [19]. [Pg.107]

TC2AS3 crystallizes in the triclinic space group PT with the lattice constants =6.574, 6=6.632, c-8.023 A, a=95.69, / =102.03, 7=104.31 , and four formula units per cell. The compound is isostructural with TC2P3, as mentioned before. The structure is closely related to the monoclinic structure of IVI02AS3, from which it can be derived by distortion and by doubling of one translation period [20]. [Pg.107]

Of the binary oxides only TCO2 and TC2O7 could hitherto be identified unambiguously. [Pg.107]

Attempts have been made to synthesize an oxide that is intermediate in composition between Tc and TCO2. Mixtures of Tc and TCO2 were prepared in different ratios, wrapped in platinum foil, vacuum-sealed into Vycor tubes, and heated at about 970 °C for 4.5 days. The distorted rutile structure of TCO2 was noted in all X-ray patterns. In addition, one new phase was found in several samples, which could be indexed on the basis of a primitive pseudocubic unit cell with a=9.45 A. The same new pseudocubic phase was obtained when a mixture of Tc and TCO2 corresponding to the composition TcOo io was heated in a sealed silica tube up to 1250 °C over a [Pg.107]


M.p. — 116-3 C, b.p. —55°C. An unstable poisonous gas (metal arsenide plus acid or arsenic compounds plus Zn plus dil. acid, AsCla plus LiAlH4) which decomposes to As... [Pg.42]

Figure B3.2.11. Total energy versus lattice constant of gallium arsenide from a VMC calculation including 256 valence electrons [118] the curve is a quadratic fit. The error bars reflect the uncertainties of individual values. The experimental lattice constant is 10.68 au, the QMC result is 10.69 (+ 0.1) an (Figure by Professor W Schattke). Figure B3.2.11. Total energy versus lattice constant of gallium arsenide from a VMC calculation including 256 valence electrons [118] the curve is a quadratic fit. The error bars reflect the uncertainties of individual values. The experimental lattice constant is 10.68 au, the QMC result is 10.69 (+ 0.1) an (Figure by Professor W Schattke).
Jin C, Taylor K J, Conoeioao J and Smalley R E 1990 Ultraviolet photoeleotron speotra of gallium arsenide olusters Chem. Phys. Lett. 175 17... [Pg.2406]

Monolayers can be transferred onto many different substrates. Most LB depositions have been perfonned onto hydrophilic substrates, where monolayers are transferred when pulling tire substrate out from tire subphase. Transparent hydrophilic substrates such as glass [18,19] or quartz [20] allow spectra to be recorded in transmission mode. Examples of otlier hydrophilic substrates are aluminium [21, 22, 23 and 24], cliromium [9, 25] or tin [26], all in their oxidized state. The substrate most often used today is silicon wafer. Gold does not establish an oxide layer and is tlierefore used chiefly for reflection studies. Also used are silver [27], gallium arsenide [27, 28] or cadmium telluride wafer [28] following special treatment. [Pg.2614]

Kher S S and Wells R L 1996 Synthesis and characterization of colloidal nanoorystals of capped gallium arsenide Nanostruct. Mater. 7 591... [Pg.2917]

C2.18.4.1 HOMOEPITAXY OF GALLIUM ARSENIDE BY ATOMIC LAYER EPITAXY... [Pg.2937]


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Aluminium arsenide

Aluminium arsenide properties

Aluminum arsenide

Aluminum arsenide, AlAs

Antimony arsenides

Arsenic and Arsenides

Arsenic arsenide

Arsenide anions

Arsenide anions alkylation

Arsenide complexes

Arsenide density

Arsenide phosphides

Arsenide phosphides mixed

Arsenide, gallium lithium

Arsenide, gallium potassium

Arsenide, gallium sodium

Arsenides Subject

Arsenides carbon halides

Arsenides magnetic properties

Arsenides metal

Arsenides physical properties

Arsenides reactions with

Arsenides silicon halides

Arsenides stoichiometries

Arsenides structures

Arsenides thermodynamic properties

Arsenides transition-metal

Arsenides, antimonides and bismuthides

Arsenides, roasting

Barium arsenide

Beryllium arsenide

Bis arsenides

Bis(trimethylsilyl)arsenide

Bismuth arsenides

Boron arsenide

Boron arsenide properties

Boron compounds arsenides

Cadmium arsenides

Cerium arsenide

Chromium arsenides

Clusters arsenide

Cobalt arsenide

Copper arsenides

Crystal structures nickel arsenide

Cupric arsenides

Detectors indium arsenide

Detectors indium gallium arsenide

Electronic materials gallium arsenide

Element and Arsenides

Excess Nickel-Arsenides

From Borazine to Gallium Arsenide 13-15 Compounds

Gallium Arsenide Microchip Manufacturing Process

Gallium aluminum arsenide, diode laser

Gallium arsenide

Gallium arsenide Arsenic

Gallium arsenide chemical vapor deposition

Gallium arsenide constants

Gallium arsenide crystal

Gallium arsenide crystal growth

Gallium arsenide demand for

Gallium arsenide deposition

Gallium arsenide device

Gallium arsenide doping

Gallium arsenide electronic properties

Gallium arsenide energy bands

Gallium arsenide films

Gallium arsenide laser

Gallium arsenide layers

Gallium arsenide molecular beam epitaxy

Gallium arsenide phosphide

Gallium arsenide photoluminescent

Gallium arsenide physical properties

Gallium arsenide semiconductor properties

Gallium arsenide semiconductors

Gallium arsenide spectroscopy

Gallium arsenide structure

Gallium arsenide substrates

Gallium arsenide surface

Gallium arsenide thermal properties

Gallium arsenide thin films

Gallium arsenide trace analysis

Gallium arsenide transistors

Gallium arsenide transistors integration

Gallium arsenide wafer

Gallium arsenide zinc-doped

Gallium arsenide, GaAs

Gallium arsenide, GaAs structure

Gallium arsenide, properties

Gallium indium arsenide phosphide

Gallium-aluminum-arsenide

Gallium-aluminum-arsenide deposition

Gallium-arsenide , photoelectrochemical

Gallium-arsenide cell

Gallium-arsenide diode lasers

Germanium arsenide

Gold arsenide

Gold complexes arsenides

Group 15 elements arsenides

Group III phosphide, arsenide, and antimonide precursors

Group III phosphides, arsenides, and antimonides

Group arsenides

Hydrogen arsenide

Hydrogen arsenids

Indium Arsenide Photodiode

Indium arsenide bands

Indium arsenide electronic properties

Indium arsenide properties

Indium arsenides

Indium gallium arsenide

Iridium arsenide

Iron arsenides

Lanthanide arsenides

Lead arsenides

Lithium arsenide

Magnesium Arsenide

Magnesium arsenide bromide

Magnesium arsenide chloride

Magnesium arsenide fluoride

Magnesium arsenide oxide

Manganese arsenides

Mercury arsenides

Molybdenum arsenide

N-Gallium arsenide

Nickel alloys arsenides

Nickel arsenide

Nickel arsenide hydrogenation

Nickel arsenide structure

Nickel arsenide structure example compounds

Nickel arsenide structure type

Niobium arsenide

Nitrides, Phosphides, Arsenides, and Related Compounds

Nitrides, Phosphides, and Arsenides

Nitrides, phosphides, arsenides, antimonides and bismuthides

Oxygen gallium arsenide

Phosphides and arsenides

Phosphides, Arsenides, and Antimonides

Photovoltaics gallium arsenide cells

Platinum arsenides

Potassium arsenides

Potassium dihydrogen arsenide

Rhodium arsenide

Ruthenium arsenide

Silicon arsenides

Silicon compared with gallium arsenide

Silver arsenides

Sodium antimonide arsenide

Sodium arsenide

Solar cells gallium-arsenide

Solid thorium arsenides

Strontium arsenide

Substitution Gallium Arsenide, GaAs

Thallium arsenide

Thermal Analysis Curves of Arsenide Minerals

Thorium arsenides

Tungsten arsenide

Unit cell nickel arsenide

Unit cell nickel arsenide lattice

Uranous arsenide

Zinc arsenides

Zirconium arsenides

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