Indium arsenide

The supplanting of germanium-based semiconductor devices by shicon devices has almost eliminated the use of indium in the related ahoy junction (see Semiconductors). Indium, however, is finding increased use in III—V compound semiconductors such as indium phosphide [22398-80-7] for laser diodes used in fiber optic communication systems (see Electronic materials Fiber optics Light generation). Other important indium-containing semiconductors include indium arsenide [1303-11-3] indium antimonide [1312-41 -0] and copper—indium—diselenide [12018-95-0]. 

Indium also combines with nonmetaUic elements and with metalloids such as N, P, Sb, As, Te, and Se. Many of the latter compounds ate semiconducting as ate the oxide and sulfide. Indium antimonide [1312-41 -0], InSb indium arsenide [1303-11-3], In As and indium phosphide [22398-80-7], InP, ate the principal semiconducting compounds. These ate all prepared by direct combination of the highly purified elements at elevated temperature under controlled conditions. 

Metal-Arsenic Bond Lengths, Torsion Angles between the Metal and Arsenic Coordination Planes, and Sums of the Angles at Arsenic for Three-Coordinate Gallium and Indium Arsenides... 

While most other techniques use a limited amount of detectors (e.g., silica for visible, photomultipliers for UV) and MIR has a small number, NIR uses many types of semiconductors for detectors. The original PbS detectors are still one of the largest used in NIR, however, indium gallium arsenide (InGaAs), indium arsenide (InAs), indium antimonide (InSb), and lead selenide (PbSe) are among the semiconductor combinations used, both cooled and ambient. 

Figure 3.15 shows the spectral dependence of the specific detectivity, D, reported for germanium and indium arsenide photodiodes, respectively. The main properties of these detectors are also summarized in Table 3.1 for comparison. 

Figure 3.15 The specific sensitivities reported for germanium and indium arsenide photodiodes.

Several III-V semiconductors, such as ALP, GaAs, luSb, AlAs, and InAs, show direct absorption edge transitions. The next example shows the analysis of the fundamental absorption edge for indium arsenide. 

EXAMPLE 4.3 Figure 4.9(a) shows the dependence of the absorption coefficient versus the photon energy for indium arsenide, (a) Determine whether or not InAs is a direct-gap semiconductor, (b) Estimate the band-gap energy, (c) If an InAs sample of 1 mm thickness is illuminated by a laser of 1 W at a wavelength of 2 jam, determine the laser power for the beam after it passes through the sample. Only consider the loss of light by optical absorption. 

Indiums low melting point is the major factor in determining its commercial importance. This factor makes it ideal for soldering the lead wires to semiconductors and transistors in the electronics industry. The compounds of indium arsenide, indium antimonide, and indium phosphide are used to construct semiconductors that have specialized functions in the electronics industry. 

Indium arsenide (In + As —> InAs). Used in semiconductor devices. 

Synonyms Indium sesquioxide indium trichloride indium nitrate indium antimonide indium arsenide indium phosphide... 

Indium arsenide and indium phosphide caused testicular damage in hamsters after repeated intratracheal administration. Both materials decreased reproductive organ weight and caudal sperm count and caused severe histopathologic changes in the testes."... 

Omura M, Yamazaki K, Tanaka A, et ah Changes in the testicular damage caused by indium arsenide and indium phosphide in hamsters two years after intratracheal instillations. 7 Occup Health 42(4) 196-204, 2000... 

Gallium arsenide is produced in polycrystaUine form as high purity, single crystals for electronic applications. It is produced as ingots or alloys, combined with indium arsenide or gallium phosphide, for semiconductor apphcations. 

The compactness and efficiency of the semiconductor laser make it particularly attractive for systems use. Other substances used have included indium arsenide, indium phosphide, indium aniimonidc. and alloys such as gallium-arsenide-phosphide. These lasers may he tuned over several percent of their normal frequency of operation by varying the current flow through the device. The tuning results from the variations in temperature with current, which, in turn, changes the index of refraction and tile resultant resonant frequency of the cavity. 

India 313, 314, 317, 318, 324-5, 496-7 Indian mustard 400 indium arsenide 23, 286 Indus alluvial plain 314, 327-8 Inner Mongolia 315, 332 inner-sphere complexes 50, 51, 52, 305 inorganic arsenic see minerals... 

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