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Gallium arsenide Arsenic

Arsine is used for the preparation of gallium arsenide [1303-00-0] GaAs, (17), and there are numerous patents covering this subject (see Arsenic and ARSENIC alloys). The conversion of a monomeric arsinogaHane to gallium arsenide has also been described (18). GaUium arsenide has important appHcations in the field of optoelectronic and microwave devices (see Lasers Microwave technology Photodetectors). [Pg.333]

In the U ansport of gallium arsenide by chlorine, there is a competition between the monochloride and the nichloride for the uansport of gallium after arsenic has evaporated as the element or as a chloride. The probability... [Pg.93]

S. Muthuvenkatranian, S. Gorantla, R. Venkat, D. L. Dorsey. Theoretical study of antisite arsenic incorporation in the low temperature molecular beam epitaxy of gallium arsenide. J App Phys S5 5845, 1998. [Pg.924]

Gallium arsenide is a semiconducting material. If we wish to modify the sample by replacing a small amount of the arsenic with an element to produce an n-type semiconductor, which element would we choose selenium, phosphorus, or silicon Why ... [Pg.255]

Arsenic and antimony are metalloids. They have been known in the pure state since ancient times because they are easily obtained from their ores (Fig. 15.3). In the elemental state, they are used primarily in the semiconductor industry and in the lead alloys used as electrodes in storage batteries. Gallium arsenide is used in lasers, including the lasers used in CD players. Metallic bismuth, with its large, weakly bonded atoms, has a low melting point and is used in alloys that serve as fire detectors in sprinkler systems the alloy melts when a fire breaks out nearby, and the sprinkler system is activated. Like ice, solid bismuth is less dense than the liquid. As a result, molten bismuth does not shrink when it solidifies in molds, and so it is used to make low-temperature castings. [Pg.745]

Most of these compounds were originally prepared by liquid-phase epitaxy. That process is now largely replaced by MOCVD, particularly in the case of gallium arsenide, gallium arsenic phosphide, and gallium aluminum phosphide. [Pg.359]

Arsenic trichloride Gallium arsenide Potassium arsenate Arsine Arsenic add Sodium arsenate Sodium arsenite CaicKjm arsenate Arsenic trioxide Arsenic pwtoxide Arsenic bisulphide Arsenic pentasulphide Arsenic hemiselenide... [Pg.459]

Webb, D.R., S.E. Wilson, and D.E. Carter. 1986. Comparative pulmonary toxicity of gallium arsenide, gallium (III) oxide, or arsenic (III) oxide intratracheally instilled into rats. Toxicol. Appl. Pharmacol. 82 405-416. [Pg.1542]

Burns, L. A. et al., Evidence for Arsenic as the Immunosuppressive Component of Gallium Arsenide, Toxicol. Appl. Pharmacol., 110, 157, 1991. [Pg.287]

Arsenic (As), 3 262-274. See also GaAsP system Gallium arsenide (GaAs) semiconductor InGaAsP entries Indium-gallium-arsenside (InGaAs) photodiodes... [Pg.71]

Silicon is the most popular material for photovoltaic (PV) power. Another material is gallium arsenide (GaAs), which is a compound semiconductor. GaAs has a crystal structure similar to that of silicon, but it consists of alternating gallium and arsenic atoms. It is well suited for PV applications since it has a high light absorption coefficient and only a thin layer of material is required, which reduces the cost. [Pg.202]

Uses/Sources. In the electronics industry to manufacture gallium arsenide and gallium arsenide phosphide for semiconductors and as a dopant produced accidentally as a result of generation of nascent hydrogen in the presence of arsenic or by the action of water on a metallic arsenide... [Pg.58]

Gallium arsenide is prepared by passing a mixture of arsenic vapor and hydrogen over gallium(lll) oxide heated at 600°C ... [Pg.310]

In one method, arsenic(III) chloride (AsCf, boiling temperature 376 K) is used to transport gallium vapour to the reaction site where gallium arsenide is deposited in layers. The reaction involved is ... [Pg.170]

Many electronic companies in the State of California create a substantial volume of arsenic waste through the processing or manufacture of gallium arsenide (GaAs) microchips. Since the concentration of arsenic in wastewaters or sludges usually exceeds disposal limits for sewer and municipal landfills, these wastes are quite often treated and disposed to a Class I hazardous landfill. This practice is undesirable environmentally and economically as a long-term mechanism for waste disposal. [Pg.344]

GALLIUM-ARSENIDE MICROCHIP MANUFACTURING ARSENIC WASTEWATER FLOW DIAGRAM... [Pg.350]

GALLIUM-ARSENIDE MICROCHIP MANUFACTURING ARSENIC WASTE WATER FLOW DIAGRAM PERCENT ARSENIC TO HF TREATMENT SYSTEM AND RECYCLED SOLIDS... [Pg.353]

How many atoms of arsenic are there in a 145-gram sample of gallium arsenide, GaAs ... [Pg.321]

See other pages where Gallium arsenide Arsenic is mentioned: [Pg.465]    [Pg.1402]    [Pg.465]    [Pg.1402]    [Pg.95]    [Pg.516]    [Pg.553]    [Pg.153]    [Pg.385]    [Pg.118]    [Pg.330]    [Pg.387]    [Pg.392]    [Pg.38]    [Pg.53]    [Pg.487]    [Pg.278]    [Pg.282]    [Pg.101]    [Pg.581]    [Pg.196]    [Pg.344]    [Pg.149]    [Pg.160]    [Pg.164]    [Pg.385]    [Pg.516]    [Pg.148]    [Pg.702]    [Pg.912]   


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