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Indium Arsenide Photodiode

Figure 3.15 shows the spectral dependence of the specific detectivity, D, reported for germanium and indium arsenide photodiodes, respectively. The main properties of these detectors are also summarized in Table 3.1 for comparison. [Pg.91]

Figure 3.15 The specific sensitivities reported for germanium and indium arsenide photodiodes. Figure 3.15 The specific sensitivities reported for germanium and indium arsenide photodiodes.
Indium arsenide and germanium photodiodes Indium arsenide photodiodes are used for the near-infrared region and typically cover 1800-3600 nm. They are destroyed by bias voltages in excess of 1V and are only separated in the photoconductive mode. They have a fast rise time ( 100 ns) and give excellent... [Pg.3494]

Arsenic (As), 3 262-274. See also GaAsP system Gallium arsenide (GaAs) semiconductor InGaAsP entries Indium-gallium-arsenside (InGaAs) photodiodes... [Pg.71]

Indium gallium arsenide (InGaAs), 3 271 Indium-gallium-arsenside photodiodes,... [Pg.469]

See other pages where Indium Arsenide Photodiode is mentioned: [Pg.3492]    [Pg.3492]    [Pg.424]    [Pg.69]    [Pg.3494]    [Pg.210]    [Pg.115]    [Pg.118]    [Pg.487]    [Pg.210]    [Pg.56]    [Pg.112]    [Pg.377]    [Pg.77]    [Pg.90]    [Pg.292]   
See also in sourсe #XX -- [ Pg.92 ]



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