Group III phosphide, arsenide, and antimonide precursors

The phenylated compounds, [Ph2GaEPh2] (66, E = P 67, E = As), were synthesized from the reaction of PhsGa with Ph2EH. Pyrolysis of 66 and 67 at 450 °C produced crystalline GaAs and GaP, which were characterized by powder XRD. Phenyl group migration was found to be the dominant reaction pathway to afford bulk GaAs and GaP. 

The growth of ZnS has been achieved from BuSH and Me2Zn or compound 76 at temperatures 325—400 °C, with little evidence of pre-reaction.The optimum temperature was 405 °C, and the resulting ZnS films exhibited excellent surface morphology and good crystallinity. 

Mixed alkyl/dithio- or diselenocarbamates are potential precursors to II-VI materials as they provide access to lower deposition temperatures. Zinc selenide, cadmium sulfide, and cadmium selenide thin films have been deposited from compounds of the type [RM(E2CNEt2)]2 (79, M = Zn, E = S, R = Me 80, M = Cd, E = S, R = Me 81, M = Cd, E = Se, R = Me 82, M = Cd, E = S, R = CH2CMe3 83, M = Cd, E = Se, R = CH2CMe3). The films were superior and higher growth rates were obtained as compared with those 

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