Gallium indium arsenide phosphide

LED materials include gallium arsenic phosphide, gallium aluminum arsenide, gallium phosphide, gallium indium phosphide, and gallium aluminum phosphide. The preferred deposition process is MOCVD, which permits very exacting control of the epitaxial growth and purity. Typical applications of LED s are watches, clocks, scales, calculators, computers, optical transmission devices, and many others. 

Chan K., Ito H., Inaba H., Optical remote monitoring of methane gas using low-loss optical fiber link and indium gallium arsenide phosphide light-emitting diode in 1.33-mm region, Appl. Phys. Lett. 1983 43 634. 

The gallium aluminum arsenide (GaAlAs) and indium phosphide (InP) laser diodes are among the most used NIR excitation sources (Figure 7.4). These diodes are... 

Gallium arsenide is produced in polycrystaUine form as high purity, single crystals for electronic applications. It is produced as ingots or alloys, combined with indium arsenide or gallium phosphide, for semiconductor apphcations. 

The compactness and efficiency of the semiconductor laser make it particularly attractive for systems use. Other substances used have included indium arsenide, indium phosphide, indium aniimonidc. and alloys such as gallium-arsenide-phosphide. These lasers may he tuned over several percent of their normal frequency of operation by varying the current flow through the device. The tuning results from the variations in temperature with current, which, in turn, changes the index of refraction and tile resultant resonant frequency of the cavity. 

Grade Ingots, polycrystalline form in high-purity electronic grade, single crystals. Often alloyed with gallium phosphide or indium arsenide. 

While the spatial resolution of AES, XPS and SIMS continues to improve, atomic scale analysis can only be obtained by transmission electron microscopy (TEM), combined with energy dispersive X-ray spectroscopy (EDX) or electron energy loss spectroscopy (EELS). EDX detects X-rays characteristic of the elements present and EELS probes electrons which lose energy due to their interaction with the specimen. The energy losses are characteristic of both the elements present and their chemistry. Reflection high-energy electron diffraction (RHEED) provides information on surface slmcture and crystallinity. Further details of the principles of AES, XPS, SIMS and other techniques can be found in a recent publication [1]. This chapter includes the use of AES, XPS, SIMS, RHEED and TEM to study the composition of oxides on nickel, chromia and alumina formers, silicon, gallium arsenide, indium phosphide and indium aluminum phosphide. Details of the instrumentation can be found in previous reviews [2-4]. 

A schematic of epitaxial growth is shown in Fig. 2.11. As an example, it is possible to grow gallium arsenide epitaxially on silicon since the lattice parameters of the two materials are similar. On the other hand, deposition of indium phosphide on silicon is not possible since the lattice mismatch is 8%, which is too high. A solution is to use an intermediate buffer layer of gallium arsenide between the silicon and the indium phosphide. The lattice parameters of common semiconductor materials are shown in Fig. 2.12. 

---