Gallium-arsenide , photoelectrochemical

Heller, A., Parkinson, B., and Miller, B., Enhanced photoelectrochemical solar-energy conversion by gallium arsenide surface modification, Appl. Phys. Lett., 33, 521, 1978. [Pg.277]

Ellis AB, Bolts JM, Kaiser SW, Wrighton MS (1977) Study of n-type gallium arsenide- and gallium phosphide-based photoelectrochemical cells. Stabilization by kinetic control and conversion of optical energy into electricity.99 2948-2853... [Pg.467]

Moderately doped diamond demonstrates almost ideal semiconductor behavior in inert background electrolytes (linear Mott -Schottky plots, photoelectrochemical properties (see below), etc.), which provides evidence for band edge pinning at the semiconductor surface. By comparison in redox electrolytes, a metal-like behavior is observed with the band edges unpinned at the surface. This phenomenon, although not yet fully understood, has been observed with numerous semiconductor electrodes (e.g. silicon, gallium arsenide, and others) [113], It must be associated with chemical interaction between semiconductor material and redox system, which results in a large and variable Helmholtz potential drop. [Pg.245]

Zafrir M, Ulman M, Zuckerman Y, Halmann M (1983) Photoelectrochemical reduction of carbon dioxide to formic acid, formaldehyde and methanol on p-gallium arsenide in an aqueous V(II)-V(III) chloride redox system. J Electroanal Chem 159 373-389... [Pg.344]