Gallium arsenide physical properties

Gallium arsenide is a compound semiconductor with a combination of physical properties that has made it an attractive candidate for many electronic applications. From a comparison of various physical and electronic properties of GaAs with those of Si (Table 4), the advantages of GaAs over Si can be readily ascertained. 

J. S. Blakemore, "Semiconducting and Other Major Properties of Gallium Arsenide," Journal of Applied Physics, 53 (1982) R123-R181. 

Ion implantation has been successfully used in doping semiconductors such as silicon and gallium arsenide. In particular, applications of ion implanted diamond have recently come to light. In these studies, the electrical conductivity and other physical properties could be controlled by ion-implanting diamond. However, only a few applications for electrochemical uses by preparing conductive electrodes have been reported [16,17]. 

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