Gallium arsenide films

The thermolysis of arsine and the arsines has become of great commercial as well as scientific interest due to their role in the formation of gallium arsenide films by MOCVD processes. The now classical MOCVD preparation of gallium arsenide developed by Manasevit (equation 11) is undergoing continuing refinement as new gallium and arsenic precursor compounds are investigated. 

Chandra S, Khare N (1987) Electrodeposition gallium arsenide film I. Preparation, structural, optical ad electrical studies. Semicond Ci. Technol 2 214... 

Cachet H, Cortes R, Froment M, Mamin G (1999) Epitaxial growth of electrodeposited cadmium selenide on (111) gallium arsenide. Philos Mag Lett 79/10 837-840 Muthuvel M, Stickney JL (2006) CdTe Electrodeposition on InP(lOO) via Electrochemical Atomic Layer Epitaxy (EC-ALE) Studies Using UHV-EC. Langmuir 22 5504-5508 Streltsov EA, Osipovich NP, Ivashkevich LS, Lyakhov AS (1999) Effect of Cd(ll) on electrodeposition of textured PbSe. Electrochim Acta 44 2645-2652 Beaunier L, Cachet H, Cortes R, Froment M (2000) Electrodeposition of PbSe epitaxial films on (111) InP. Electrochem Commun 2 508-510... 

Manasevit A process for making electronic devices by depositing thin films of elements or simple compounds such as gallium arsenide on flat substrates by CVD from volatile compounds such as trimethyl gallium and arsine. 

The trimethylamine adduct of aluminum hydride (alane) has been of recent interest as a precursor for the chemical vapor deposition (CVD) of aluminum metal1 and aluminum gallium arsenide thin films.2 Because of the absence of aluminum-carbon covalent bonds in the precursor, carbon incorporation in the resulting films can be suppressed significantly. In addition, the deposition temperature can be lowered. 

The last class of CVD reaction is what we will call co-deposition. This indicates deposition from a mixture of precursors, where atoms from several species contribute to the deposited film. This approach is generally used for the deposition of compound materials, where the desired film is composed of several elements. Examples of this kind of CVD system include the deposition of gallium arsenide from trimethylgallium (TMG) and arsine Ga(CH3)3 + ASH3 GaAs + 3 CH, as well as the deposition of silicon nitride from silicon... 

Another example of phase change during reaction is chemical vapor deposition (CVD), a process used to manufacture microelectronic materials. Here, gas-phase reactants are deposited (analogous to condensation) as thin films on solid surfaces (see Problem P3-25). One such reaction is the production of gallium arsenide, which is used in computer chips. 

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