Group III phosphides, arsenides, and antimonides

The adsorption species was concluded to be GaCH3 under monolayer growth conditions, as detected by a real time optical monitoring method/ A possible reaction of GaCH3 with ASH3 was proposed, as shown in Equation (2). 

A novel approach to InP films involved the reaction between the indium(i) precursor [In(C5Mes)] and white-P4 by MOCVD. The advantages of the reagents [In(C5Mes)] and P4 include the following. 

A gallane-quinuclidine adduct (compound 19) has been used as an alternative Ga source for the MOMBE growth of GaAs films. The surface decomposition of compound 19 is similar to the related alane adduct, [AlH3 NMe3 ] 7, and growth of GaAs is observed at much lower temperatures than those employed when Ga alkyl precursors are utilized. 

Tris(dimethylamino)stibine, Sb(NMe2)3, has been used, in combination with Mc3ln, to grow high-quality InSb 12S 129 

An alternative method for lowering the growth temperature of III-V semiconductors is to use single-source precursors, which already contain an M-E (M = Al, Ga, In E = N, P, As, Sb) bond at the core of the molecule, with various other ligands attached to each of the elements. The desired reaction pathway involves adsorption of the 

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