Indium arsenide properties

Figure 3.15 shows the spectral dependence of the specific detectivity, D, reported for germanium and indium arsenide photodiodes, respectively. The main properties of these detectors are also summarized in Table 3.1 for comparison. 

Physical phenomena In heterovalent substitutional solid solutions dqiend on the chemical nature of the initial components, their mutual reactions, and the formation mechanism of the solid solution. The first studies of the properties of solid solutions formed by indium arsenide with compounds have been published in [1-5]. 

In systems 3 and 6, a linear relationship is observed between the energy gap and the composition. The phenomena observed in solid solutions of systems 1-6 can be explained from the behavior of group n and VI elements in indium arsenide and also by the difference between the physicochemical properties of the initial components. 

The possibility of varying the electrical properties of solid solutions of indium arsenide with A b compounds according to the position of the group II and group VI elements in the periodic table, the conditions of preparing the alloys, and the composition not only enables the physical phenomena in multicomponent phases to be studied but also indicates methods for preparing materials with specified physical characteristics. 

The InAs-InjTe, InAs-Te, and InAs-As Te, sections in the ternary indium-arsenic-tellurium system were studied by physicochemical analytical methods. Solid solutions based on indium arsenide were found in the system, and die possible existence of the phases InAsTe, InAsTe, is postulated, these melting with decomposition at 680 and 390 C, respectively. The results were used to construct a diagram for the liquidus surface of the indium-arsenic -tellurium system. It is suggested diat teUurium may exhibit amphoteric properties. 

Indium Arsenide (InAs). The transport properties are determined mainly by the electrons in the Fe minimum. Pure material with intrinsic conduction down to 450 K is available. 

Kornyushkin, N.A. Valisheva, N.A. Kovchavtsev, A.P. Kuryshev, G.L. (1996). Influence of properties of the interface and deep levels in low-energy p on voltage-capacitance characteristic of MIS-structures on indium arsenide. FTP, Vol.30, issue 5, pp. 914-917, ISSN 0015-3222... 

Seah, M.P., Gilmore I.S. Spencer S.J. (2001). Quantitative XPS. Journal of Electron Spectroscopy and Related Phenomena, 120, pp. 93-111. ISSN 0368-2048 Seah, M.P. Spenser, S.J. (2002). Ultrathin Si02 on Si. II Issues in quantification of the oxide thickness. Surf. Interface Anal., Vol. 33, p. 640-652, ISSN 0142-2421 Sorokin, I.N. Gatko, L.E. (1985). Influence of fluorine on growth and properties of anode oxide layers of indium arsenide. Inorganic materials, Vol. 21, No. 4, pp. 537-540, ISSN0002-337X... 

Abbasov A.S., Nikoliskaja A.V., Gerassimov Ja.I, Vassiliev V.P. (1964) The thermodynamic properties of indium arsenide investigated by the electromotive force method. Dokl. AN SSSR, Vol.156, No.l, p.118-121. (in Russian)... 

The detector characteristic may very well be included in the filter design. For example, an indium arsenide photovoltaic detector, operating at 195 K, has a very sharp cut-off at 3.6 m. In combination with a thin germanium window, a well-defined 1.9-3.6 m response function is obtained. However, with a limited number of substances available for the design of filters based on intrinsic absorption and reflection phenomena other methods must be found to constmct filters where the transmission limits can be set by the scientific objectives and not so much by the absorption properties of available substances such methods are based on the interference principle, to be discussed in Section 5.6, but first we deal with prism spectrometers, gas filters, and pressure modulation. 

The low-melting-point (157 °C), silver metal is mainly used in alloys to decrease the melting point. Combined with tin, lead, and bismuth to produce soldering metal for wide temperature ranges. The element is highly valuable in the electronics age as its unique properties are ideal for solar cells, optoelectronics, and microwave equipment. The arsenide is used in lasers and is also suitable for transistors. ITO (indium tin oxide) is a transparent semiconductor with wide application in displays, touchscreens, etc. In the household, indium as an additive prevents the tarnishing of silverware. Some electronic wristwatches contain indium batteries. 

Single crystal silicon (sc-Si), polyciystalline silicon (p-Si), and amorphous silicon (a-Si) can all be used to make solar cells, with fabrication cost and device photoconversion efficiencies decreasing as one moves from single-crystal to amorphous materials. Various properties of these materials are summarized in Table 8.1. Other relatively common solar cell materials include gallium arsenide (GaAs), copper indiirm diselenide (CIS), copper indium-gallium... 

Gunn devices belong to a group called transferred electron oscillators and are the ones most often encountered in MMW spectrometry, as they offer the lowest noise figure. They rely on a bulk property of gallium arsenide and indium phosphide when a DC voltage is applied across the end contacts of the n-type material. As the voltage is increased, the current initially increases linearly and then starts to oscillate, with a period closely related to the transit time of the carriers between the contacts across the bulk material. The device is housed in a cavity coupled to a transmission line and is used as a source of MMW radiation, the frequency of which can be tuned mechanically and electronically. 

There have been many papers In recent years dealing with the magnetic properties of semiconductors. Such studies are of particular Importance when discussing the band structure and chemical bonding in semiconducting compounds. Indium antimonide and arsenide have been thoroughly studied in this respect ([1-3], etc.). It is of interest to study the solid solutions based on these compounds and, in particular, to examine the nature of the relationship between the susceptibility of the solid solutions and their composition, temperature, and carrier density. 

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