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Aluminum-gallium-arsenide

LED materials include gallium arsenic phosphide, gallium aluminum arsenide, gallium phosphide, gallium indium phosphide, and gallium aluminum phosphide. The preferred deposition process is MOCVD, which permits very exacting control of the epitaxial growth and purity. Typical applications of LED s are watches, clocks, scales, calculators, computers, optical transmission devices, and many others. [Pg.390]

Gallium alloys, dental applications, 8 304 Gallium aluminum arsenide, 3 270 Gallium antimonide, 3 53, 58 Gallium-arsenic (GaAs) photodiodes, 79 156... [Pg.389]

The gallium aluminum arsenide (GaAlAs) and indium phosphide (InP) laser diodes are among the most used NIR excitation sources (Figure 7.4). These diodes are... [Pg.190]

The gallium arsenide laser actually contains a layer of GaAs sandwiched between layers ofp and /J-type gallium aluminum arsenide (Gai- AfAs). As depicted in Figure 8.12, the band gap of gallium aluminum arsenide is larger than that of gallium arsenide. [Pg.354]

Characteristics of silicone and gallium-aluminum-arsenide diodes. [Pg.498]

Gallium aluminum arsenide in solar cells Gallium arsenide phosphide in light-emitting diodes Gallium arsenide infrared detectors, lasers, and photocopiers... [Pg.68]

GaAlAs - Gallium -Aluminum -Arsenide (LASER medium). [Pg.277]

See other pages where Aluminum-gallium-arsenide is mentioned: [Pg.431]    [Pg.85]    [Pg.387]    [Pg.391]    [Pg.564]    [Pg.341]    [Pg.355]    [Pg.431]    [Pg.141]    [Pg.330]    [Pg.642]    [Pg.174]    [Pg.350]    [Pg.625]    [Pg.630]    [Pg.315]    [Pg.96]    [Pg.183]    [Pg.536]    [Pg.859]    [Pg.859]   


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Aluminum arsenide

Arsenides

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