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Indium arsenide electronic properties

Indium Arsenide (InAs). The transport properties are determined mainly by the electrons in the Fe minimum. Pure material with intrinsic conduction down to 450 K is available. [Pg.647]

Seah, M.P., Gilmore I.S. Spencer S.J. (2001). Quantitative XPS. Journal of Electron Spectroscopy and Related Phenomena, 120, pp. 93-111. ISSN 0368-2048 Seah, M.P. Spenser, S.J. (2002). Ultrathin Si02 on Si. II Issues in quantification of the oxide thickness. Surf. Interface Anal., Vol. 33, p. 640-652, ISSN 0142-2421 Sorokin, I.N. Gatko, L.E. (1985). Influence of fluorine on growth and properties of anode oxide layers of indium arsenide. Inorganic materials, Vol. 21, No. 4, pp. 537-540, ISSN0002-337X... [Pg.324]

The low-melting-point (157 °C), silver metal is mainly used in alloys to decrease the melting point. Combined with tin, lead, and bismuth to produce soldering metal for wide temperature ranges. The element is highly valuable in the electronics age as its unique properties are ideal for solar cells, optoelectronics, and microwave equipment. The arsenide is used in lasers and is also suitable for transistors. ITO (indium tin oxide) is a transparent semiconductor with wide application in displays, touchscreens, etc. In the household, indium as an additive prevents the tarnishing of silverware. Some electronic wristwatches contain indium batteries. [Pg.137]

Gunn devices belong to a group called transferred electron oscillators and are the ones most often encountered in MMW spectrometry, as they offer the lowest noise figure. They rely on a bulk property of gallium arsenide and indium phosphide when a DC voltage is applied across the end contacts of the n-type material. As the voltage is increased, the current initially increases linearly and then starts to oscillate, with a period closely related to the transit time of the carriers between the contacts across the bulk material. The device is housed in a cavity coupled to a transmission line and is used as a source of MMW radiation, the frequency of which can be tuned mechanically and electronically. [Pg.39]


See other pages where Indium arsenide electronic properties is mentioned: [Pg.193]    [Pg.501]    [Pg.5807]    [Pg.525]    [Pg.463]    [Pg.448]    [Pg.501]    [Pg.467]    [Pg.915]   
See also in sourсe #XX -- [ Pg.581 ]




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