Gallium arsenide chemical vapor deposition

The trimethylamine adduct of aluminum hydride (alane) has been of recent interest as a precursor for the chemical vapor deposition (CVD) of aluminum metal1 and aluminum gallium arsenide thin films.2 Because of the absence of aluminum-carbon covalent bonds in the precursor, carbon incorporation in the resulting films can be suppressed significantly. In addition, the deposition temperature can be lowered. 

Another example of phase change during reaction is chemical vapor deposition (CVD), a process used to manufacture microelectronic materials. Here, gas-phase reactants are deposited (analogous to condensation) as thin films on solid surfaces (see Problem P3-25). One such reaction is the production of gallium arsenide, which is used in computer chips. 

Chemical Vapor Deposition. Chemical vapor deposition (CVD) is a process where by the heat-induced decomposition of gases form different semiconductor layers such as silicon dioxide, silicon nitride, polysilicon, and gallium arsenide on the surface of the wafer. When the layer formed is a continuation of the crystalline structure of the substrate, the process used is epitaxial growth. Other, non-epitaxial forms of CVD involve the deposition of layers that are a different structure than the substrate. Table 5 outlines typical chemistries associated with CVD. 

Gallium arsenide nanostructures by metalorganic chemical vapor deposition. " ... 

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