Boron arsenide properties

Prasad C, Sahay M (1989) Electronic stmcture and properties of boron phosphide and boron arsenide. Phys Status Solidi 154b 201-207... 

Boron Arsenide (BAs). There is almost no information about the semiconducting properties of BAs. 

Generally speaking most of the shallow impurity levels which we shall encounter are based on substitution by an impurity atom for one of the host atoms. An atom must also occupy an interstitial site to be a shallow impurity. In fact, interstitial lithium in silicon has been reported to act as a shallow donor level. All of the impurities associated with shallow impurity levels are not always located at the substitutional sites, but a part of the impurities are at interstitial sites. Indeed, about 90% of group-VA elements and boron implanted into Si almost certainly take up substitutional sites i.e., they replace atoms of the host lattice, but the remaining atoms of 10% are at interstitial sites. About 30% of the implanted atoms of group-IIIA elements except boron are located at either a substitutional site or an interstitial site, and the other 40% atoms exist at unspecified sites in Si [3]. The location of the impurity atoms in the semiconductors substitutional, interstitial, or other site, is a matter of considerable concern to us, because the electric property depends on whether they are at the substitutional, interstitial, or other sites. The number of possible impurity configurations is doubled when we consider even substitutional impurities in a compound semiconductor such as ZnO and gallium arsenide instead of an elemental semiconductor such as Si [4],... 

Boron compounds with nonmetals, i.e., boron hydrides, carbides, nitrides, oxides, silicides, and arsenides, show simple atomic structures. For example, boron nitride (BN) can be found in layered hexagonal, rhombohedral, and turbostratic or denser cubic and wurtzite-like structures, as well as in the form of nanotubes and fullerenes. Boron compounds with metalloids also differ from borides by electronic properties being semiconductors or wide-gap insulators. 

---