Arsenide phosphides

Chan K., Ito H., Inaba H., Optical remote monitoring of methane gas using low-loss optical fiber link and indium gallium arsenide phosphide light-emitting diode in 1.33-mm region, Appl. Phys. Lett. 1983 43 634. 

Transition-Metal Arsenides, MAs, and Mixed Arsenide Phosphides, MAsi yPy... 

Fig. 23 Dependence of metal and pnicogen charges on level of P substitution (y) in a mixed arsenide phosphide series MAsi yPy. The average pnicogen charge, qpn = yqP + l-y)q s, shown by the dashed line, balances the metal charge. Reprinted with permission from [61], Copyright Elsevier...

However, with the improved resolution of modem XPS instruments, BE shifts as small as 0.1 eV can be detected and may be significant. These shifts can be interpreted, to a first approximation, by changes in the atomic charge (an intraatomic effect), but to account for more subtle differences, as seen in the mixed-metal phosphides M aM P and mixed arsenide phosphides MAsi -VP>, the role of next-nearest neighbours cannot be neglected. These interatomic effects, as incorporated into the charge potential model, help explain the unusual trends in BE observed in these series. 

Uses/Sources. In the electronics industry to manufacture gallium arsenide and gallium arsenide phosphide for semiconductors and as a dopant produced accidentally as a result of generation of nascent hydrogen in the presence of arsenic or by the action of water on a metallic arsenide... 

The compactness and efficiency of the semiconductor laser make it particularly attractive for systems use. Other substances used have included indium arsenide, indium phosphide, indium aniimonidc. and alloys such as gallium-arsenide-phosphide. These lasers may he tuned over several percent of their normal frequency of operation by varying the current flow through the device. The tuning results from the variations in temperature with current, which, in turn, changes the index of refraction and tile resultant resonant frequency of the cavity. 

XRD and PL are the usual compositional techniques used to determine the alloy composition. These non-destructive methods provide fast feedback to the growth and can be very accurate in the III-arsenide/phosphide alloys systems. However, for the M-nitrides, the epitaxial films are normally grown on a mismatched substrate which results in residual stress being present in the films, ft is also sometimes difficult to identify the band-to-band emission and the magnitude of the bowing parameters is not well established. Therefore, one must be cautious when employing these methods to determine the alloy compositions. In addition, these techniques cannot be used to determine the composition of multilayer structures. 

Gronet C. M. and Lewis N. S. (1984), Systematic studies of the semiconductor/liquid junction—n-gallium arsenide phosphide anodes in aqueous Se /Sei solutions , J. Phys. Chem. 88, 1310-1317. 

Gallium aluminum arsenide in solar cells Gallium arsenide phosphide in light-emitting diodes Gallium arsenide infrared detectors, lasers, and photocopiers... 

GaAsP Gallium Arsenide Phosphide. Material used for photocathodes... 

Indium gaUium arsenide phosphide (InGaAsP) lasers NIR (1,200-2,000 nm) From 10 mW up to 1 W(CW) Room temperature, low cost... 

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