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Mixed arsenide phosphides

Transition-Metal Arsenides, MAs, and Mixed Arsenide Phosphides, MAsi yPy... [Pg.92]

Fig. 23 Dependence of metal and pnicogen charges on level of P substitution (y) in a mixed arsenide phosphide series MAsi yPy. The average pnicogen charge, qpn = yqP + l-y)q s, shown by the dashed line, balances the metal charge. Reprinted with permission from [61], Copyright Elsevier... Fig. 23 Dependence of metal and pnicogen charges on level of P substitution (y) in a mixed arsenide phosphide series MAsi yPy. The average pnicogen charge, qpn = yqP + l-y)q s, shown by the dashed line, balances the metal charge. Reprinted with permission from [61], Copyright Elsevier...
However, with the improved resolution of modem XPS instruments, BE shifts as small as 0.1 eV can be detected and may be significant. These shifts can be interpreted, to a first approximation, by changes in the atomic charge (an intraatomic effect), but to account for more subtle differences, as seen in the mixed-metal phosphides M aM P and mixed arsenide phosphides MAsi -VP>, the role of next-nearest neighbours cannot be neglected. These interatomic effects, as incorporated into the charge potential model, help explain the unusual trends in BE observed in these series. [Pg.139]

No, the editor didn t know what this name meant either.) It means salts of the triva-lent anions of Group V, restricted in [1] to arsenides, antimonides and bismuthides and prepared by reaction of sodium pnictides with anhydrous halides of transition and lanthanide metals. This violently exothermic reaction may initiate as low as 25°C. Avoidance of hydrated halides is cautioned since these are likely to react uncontrollably on mixing. Another paper includes a similar reaction of phosphides, initiated by grinding [2], Nitrides are reported made from the thermally initiated reaction of sodium azide with metal halides, a very large sealed ampoule is counselled to contain the nitrogen [3],... [Pg.253]

Al, Ga and In form tetrahedrally coordinated solids with elements of group 15, which are part of the series of III-V semi-conductor (i.e., groups 13-15). The mixed compounds gallium aluminium phosphides Ga r AljP and the arsenide Gaj r AljAs are used for light-emitting diode (LED) displays and semiconductor lasers. [Pg.74]

Mixed halide-phosphide and arsenide bridged dimers 90 and 91 are formed by association of diorganogallium halides with diorganogallium phosphides. [Pg.133]

Numerous metal phosphides, arsenides, antimonides, bismuthides, and so on, have been prepared, and the metal alloying properties of As, Sb and Bi have been recognised since ancient times. The usefulness of P is more limited and knowledge of the properties of mixed pnictide metal alloys involving P is generally less well developed. [Pg.112]

Another method of synthesis mentioned in [39] is tte direct mechanical mixing of a polymer solution (aqueous or non-aqueous) with initially synthesized highly dispersive particles of nanosize with vaporization of water from the solution. In this case the inhomogeneity of filler distribution is high and coagulation often takes place [39]. The nanopartides are usually synthesized by this arrested precipitation . The phosphides and arsenides of Zn and Cd [12], CuCl [12], semiconductor Pbl2 and Fc302 were reported to form nanoparticles in this way. [Pg.84]


See other pages where Mixed arsenide phosphides is mentioned: [Pg.123]    [Pg.124]    [Pg.126]    [Pg.127]    [Pg.128]    [Pg.2397]    [Pg.164]    [Pg.164]    [Pg.695]    [Pg.99]    [Pg.501]    [Pg.178]    [Pg.11]    [Pg.467]    [Pg.2397]    [Pg.642]    [Pg.289]    [Pg.75]    [Pg.107]    [Pg.83]    [Pg.221]    [Pg.47]    [Pg.5]   
See also in sourсe #XX -- [ Pg.78 ]




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