Gallium arsenide spectroscopy

Atomic absorption spectroscopy of VPD solutions (VPD-AAS) and instrumental neutron activation analysis (INAA) offer similar detection limits for metallic impurities with silicon substrates. The main advantage of TXRF, compared to VPD-AAS, is its multielement capability AAS is a sequential technique that requires a specific lamp to detect each element. Furthermore, the problem of blank values is of little importance with TXRF because no handling of the analytical solution is involved. On the other hand, adequately sensitive detection of sodium is possible only by using VPD-AAS. INAA is basically a bulk analysis technique, while TXRF is sensitive only to the surface. In addition, TXRF is fast, with an typical analysis time of 1000 s turn-around times for INAA are on the order of weeks. Gallium arsenide surfaces can be analyzed neither by AAS nor by INAA. 

Table 4.1-59 Phonon wavenumbers of gallium compounds. Gallium nitride (GaN), T = 300K, from Raman spectroscopy gallium phosphide (GaP), RT, from an analysis of Raman, neutron, luminescence, and absorption data gallium arsenide (GaAs), T = 296 K, from coherent inelastic neutron scattering gallium antimonide (GaSb), T = 300 K, from second-order Raman effect...

Raman spectroscopy may be performed on either a dispersive instrument or a FT instrument. All of the spectra provided in this chapter were obtained from a FT-Raman instrument (see Fig. 62), featuring a NdiYAG solid-state laser, and a InGaAs (indium-gallium arsenide) detector, combined with a silicon on quartz beam splitter. Note that in the FT-Raman experiment, the sample effectively becomes the source to the FT spectrometer. Dispersive Raman instruments are also popular, and these usually feature a silicon-based array detector (CCD array) in combination with either a visible laser (doubled YAG or HeNe) or a short-wavelength solid-state NIR laser. 

While the spatial resolution of AES, XPS and SIMS continues to improve, atomic scale analysis can only be obtained by transmission electron microscopy (TEM), combined with energy dispersive X-ray spectroscopy (EDX) or electron energy loss spectroscopy (EELS). EDX detects X-rays characteristic of the elements present and EELS probes electrons which lose energy due to their interaction with the specimen. The energy losses are characteristic of both the elements present and their chemistry. Reflection high-energy electron diffraction (RHEED) provides information on surface slmcture and crystallinity. Further details of the principles of AES, XPS, SIMS and other techniques can be found in a recent publication [1]. This chapter includes the use of AES, XPS, SIMS, RHEED and TEM to study the composition of oxides on nickel, chromia and alumina formers, silicon, gallium arsenide, indium phosphide and indium aluminum phosphide. Details of the instrumentation can be found in previous reviews [2-4]. 

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