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Silicon compared with gallium arsenide

Atomic absorption spectroscopy of VPD solutions (VPD-AAS) and instrumental neutron activation analysis (INAA) offer similar detection limits for metallic impurities with silicon substrates. The main advantage of TXRF, compared to VPD-AAS, is its multielement capability AAS is a sequential technique that requires a specific lamp to detect each element. Furthermore, the problem of blank values is of little importance with TXRF because no handling of the analytical solution is involved. On the other hand, adequately sensitive detection of sodium is possible only by using VPD-AAS. INAA is basically a bulk analysis technique, while TXRF is sensitive only to the surface. In addition, TXRF is fast, with an typical analysis time of 1000 s turn-around times for INAA are on the order of weeks. Gallium arsenide surfaces can be analyzed neither by AAS nor by INAA. [Pg.355]


See other pages where Silicon compared with gallium arsenide is mentioned: [Pg.63]    [Pg.269]    [Pg.79]    [Pg.487]    [Pg.475]    [Pg.184]    [Pg.185]    [Pg.142]    [Pg.1469]    [Pg.1474]    [Pg.1513]    [Pg.472]    [Pg.307]    [Pg.208]    [Pg.3]    [Pg.453]    [Pg.282]    [Pg.714]    [Pg.459]    [Pg.800]    [Pg.245]   


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