Arsenides physical properties

Arsenic exists as grey, yellow and black forms of differing physical properties and susceptibilities towards atmospheric oxygen. The general chemistry is similar to that of phosphorus but whereas phosphorus is non-metallic, the common form of arsenic is metallic. Traces of arsenides may be present in metallic residues and drosses these may yield highly toxic arsine, ASH3, with water. 

Eu—As system. — Brixner. [227] has reported the preparation of arsenides, antimonides and tellurides of the type MA (M = rare earths, Sc, Y and A = As, Sb, Te) and has studied the structural and electrical properties of these compounds. The compounds were prepared by direct synthesis from the elements in an argon atmosphere. All compounds possess a grey metallic appearance and crystallize in the NaCl structure. The following physical properties on EuAs and EuSb are available [227]. 

Many metals form arsenides with interesting stmctures and valuable physical properties. In most cases these compounds are prepared by direct reaction of the elements in the required proportions. 

Gallium arsenide is a compound semiconductor with a combination of physical properties that has made it an attractive candidate for many electronic applications. From a comparison of various physical and electronic properties of GaAs with those of Si (Table 4), the advantages of GaAs over Si can be readily ascertained. 

As a final accomplishment, the reaction between (63) and the bis(electrophile) (70) afforded the 24-membered hexa(tertiary arsine) (71) in 15% yield. A 6% yield of (71) resulted from the reverse condensation, that is, the reaction of (66) with the bis(arsenide) (72) (Scheme 11). The product was isolated by column chromatography and characterized by elemental analysis and MS. The ease with which the heterocycles (64) and (69) and (71) can be purified by column chromatography is an important physical property that distinguishes them from similar tertiary phosphines and opens up the possibility for the complete separation of diastereomers. 

The intermetallic compounds MnAs, MnSb, and MnBi crystallize with a nickel arsenide-type structure, and they have many features in common regarding their structure and nature of physical properties. At room temperature, all these compounds are ferromagnetic. The Curie point of manganese arsenide is 45°C of MnSb and MnBi it is 314 and 360°C, respectively. Their ferromagnetism is due to the uncompensated spins of the 3d electron shells of the manganese atoms, located at the crystal lattice points with the coordinates 0, 0, 0 and 0, 0, i. 

Ion implantation has been successfully used in doping semiconductors such as silicon and gallium arsenide. In particular, applications of ion implanted diamond have recently come to light. In these studies, the electrical conductivity and other physical properties could be controlled by ion-implanting diamond. However, only a few applications for electrochemical uses by preparing conductive electrodes have been reported [16,17]. 

J. S. Blakemore, "Semiconducting and Other Major Properties of Gallium Arsenide," Journal of Applied Physics, 53 (1982) R123-R181. 

Physical phenomena In heterovalent substitutional solid solutions dqiend on the chemical nature of the initial components, their mutual reactions, and the formation mechanism of the solid solution. The first studies of the properties of solid solutions formed by indium arsenide with compounds have been published in [1-5]. 

The possibility of varying the electrical properties of solid solutions of indium arsenide with A b compounds according to the position of the group II and group VI elements in the periodic table, the conditions of preparing the alloys, and the composition not only enables the physical phenomena in multicomponent phases to be studied but also indicates methods for preparing materials with specified physical characteristics. 

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