N-Gallium arsenide

Parkinson, B.A., Heller, A., and Miller, B., Effects of cations on the performance of the photoanode in the n-gallium arsenide/potassium selenide (K2Se)-potassium diselenide (K2Se2)-potassium hydroxide/carbon semiconductor liquid junction solar cell, /. Electrochem. Soc., 126,954,1979. 

Gronet C. M. and Lewis N. S. (1984), Systematic studies of the semiconductor/liquid junction—n-gallium arsenide phosphide anodes in aqueous Se /Sei solutions , J. Phys. Chem. 88, 1310-1317. 

Li, J. and Peter, L.M. (1985) Surface recombination at semiconductor electrodes. Part IV. Steady-state and intensity modulated photocurrents at n-Gallium arsenide electrodes. Journal of Electroanalytical Chemistry, 193, 27-47. 

Noufi, Frank and co-workers have reported that the photocorrosion of single crystal n-gallium arsenide and polycrystalline n-silicon electrodes can be suppressed when used in aqueous solutions containing ferrous/ferric ions. The coated n-silicon electrode had a short circuit current of 2.9 mA/cm, a power efficiency of 3 %, and functioned for 122 hours of continuous irradiation (143 mW/cm ) with only a 30 % reduction in the photocurrent. For comparison, the current decays to zero within a minute with a uncoated electrode . These results are shown in Fig. 10. The n-gallium arsenide electrode showed a similar photocurrent response. Adhesion of the film to the semiconductor surface is a problem with these electrodes and is much more prevalent with the gallium arsenide, where the film peels off the electrode in aqueous solutions. 

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See also in sourсe #XX -- [ , ]

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