Etch plasma

The distribution of impurities over a flat sihcon surface can be measured by autoradiography or by scanning the surface using any of the methods appropriate for trace impurity detection (see Trace and residue analysis). Depth measurements can be made by combining any of the above measurements with the repeated removal of thin layers of sihcon, either by wet etching, plasma etching, or sputtering. Care must be taken, however, to ensure that the material removal method does not contaminate the sihcon surface. 

Finally, it should be mentioned that, in the case of etching plasmas, any of the mass spectrometric or optical spectroscopic methods described in Sect. 2.1.4 could in principle be calibrated to measure the etch rate simply by monitoring the etch product. This approach, has been used for end-point detection in the etch process These methods may also be applicable to polymerizing plasmas where interesting correlations between the concentration of certain gas phase species and polymerization rate have been noted s . ... 

Minimal (Sample on Ground Plane) Plasma Cleaning Plasma Anodization (Oxygen plasma) Plasma Etching Plasma Ashing (Oxygen plasma)... 

K I 1 OkPa filament graphite etching plasma ... 

When stable molecules are formed in the luminous gas phase, the balances considered in Figure 10.1 will shift in a significant manner. The first observation of polymerization in an etching plasma environment by Kay et al. is an extreme case showing dramatic change in plasma processing [1]. In this case, the formation of... 

The immediate concern about the presence of phosphine in doped oxide films was safety in handling these materials. The permissible exposure limit (PEL) set by OSHA is 0.3 ppm, and the concentration immediately dangerous to life and health (IDLH) is 200 ppm. All precautions must be taken when etching plasma PSG of BPSG wafers. A basket of twenty 3 inch wafers, 5000 angstroms thick, containing 5 wt. % phosphorus could release as much as 2500 ppm of phosphine or 12.5 times the IDLH. 

Ion etching Plasma sputtering Magnetron sputtering Ion sputtering... 

Exposure to oxygen and oxidizing plasmas can affect the performance of organic semiconductor materials. Steudel, et al. has shown that etch plasmas can affect transistor material and shift the threshold voltage approximately lOO/rm away from the perimeter of the resist, and that the device layout should protect the transistor material by overlapping the resist at least by this amount [64]. 

Etch vias in the dielectric directly over the original bond pads using a photoresist process. Vias may be chemically etched, plasma etched, or laser ablated. 

All three cases mentioned earlier (plasma etching, plasma polymerization, surface modification) have a number of important applications related to organic materials in general and polymers in particular. 

OOBoo Booth, J.P., Cunge, G., Bietmier, L., Romanini, D., Kachanov, A. Ultraviolet cavity ring-down spectroscopy of free radicals in etching plasmas, Chem. Phys. Lett. 317 (2000) 631-636. 

Advanced Si Etching (ASE) DRIE High aspect ratio Si etching ICP etching Plasma etching... 

The most direct need for plasma diagnostic techniques results from the determination of the etch end point for a given process. In addition, plasma diagnostic techniques are used for process monitoring and provide information on the types of species present in a plasma etching, the concentration, and the energy content. Laser interferometry (or reflectance) and optical emission spectroscopy (OES) are two commonly used techniques for EPD and require only an appropriate optical window attached to the chamber. They are easily implemented to obtain information about etching plasmas [1]. 

Aspect Ratio Dependent Etching Plasma Etching... 

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