Semiconductors, plasma etching

Lam Research Corporation has been putting great efforts and sup>port for the new chamber materials development. It becomes more critical for semiconductor plasma etching equipment companies to develop new and advanced materials for current and next generation plasma etching feature size applications. 

Plasma etching is widely used in semiconductor device manufacturing to etch patterns in thin layers of polycrystaUine siUcon often used for metal oxide semiconductor (MOS) device gates and interconnects (see Plasma TECHNOLOGY). 

Born in London, Paul May grew up in Redditch, Worcestershire. He went on to study at Bristol University, where he graduated with a first class honours in chemistry in 1985. He then joined GEC Hirst Research Centre in Wembley where he worked on semiconductor processing for three years, before returning to Bristol to study for a PhD in plasma etching of semiconductors. His PhD was awarded in 1991, and he then remained at Bristol to co-found the CVD diamond research group. In 1992 he was awarded a Ramsay Memorial Fellowship to continue the diamond work, and after that a Royal Society University Fellowship. In October 1999 he became a full-time lecturer in the School of Chemistry at Bristol. He is currently 36 years old. His scientific interests include diamond films, plasma chemistry, interstellar space dust, the internet and web technology. His recreational interests include table-tennis, science fiction, and heavy metal music. 

Scanning electron microscopy confirmed sub-0.5p.m resolution capabilities in TBSS -acid generator resist films (Figure 3). Note that the edge profiles are nearly vertical. Preliminary results indicate that the plasma etching resistance is satisfactory for semiconductor device processing. 

Semiconductor industry, vacuum chamber applications, clamp rings for gas plasma etching equipment, wafer retaining rings for gas plasma etching, vacuum tips. .. 

The ever decreasing dimensions of semiconductor devices impose paradoxical requirements on the plasma etching and deposition processes involved in their manufacture. ... 

Bauer S, Wolff I, Werner N, et al. 1992. Toxicological investigations in the semiconductor industry I. Studies on the acute oral toxicity of a complex mixture of waste products from the aluminium plasma etching process. Toxicology and Industrial Health 8 141-156. 

One of the most important issues preventing commercialization of power SiC MOSFETs so far is MOS channel resistance that results from the extremely low inversion channel mobility in 4H-SiC [19]. This problem may become especially significant in the case of 4H-SiC UMOSFETs, where the oxide-semiconductor interface is severely damaged by plasma etch when the trenches are formed. In general, there are two major approaches to minimize the channel component of on-resistance ... 

Applications of CF4, C2F( and NF3 to plasma etching/cleaning in semiconductor industries... 

Morgan, R. A. Plasma Etching in Semiconductor Fabrication Elsevier Oxford, England, 1985 p 302 and U.K. Patent Application 8403698 Silylation of Photoresists . 

Phosgene was found to be a suitable reagent for the plasma etching of the semiconductor GaAs, but it reacted more slowly than dichlorine [1910], It has also been used, mixed with CO, as an etchant gas for refractory metals and, particularly, their silicides [701a],... 

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