High aspect ratios

Kent A D, Shaw T M, Moinar S V and Awschaiom D D 1993 Growth of high aspect ratio nanometer-scaie magnets with chemicai vapor deposition and scanning tunneiiing microscopy Science 262 1249... 

Figure C2.17.2. Transmission electron micrograph of a gold nanoneedle. Inverse micelle environments allow for a great deal of control not only over particle size, but also particle shape. In this example, gold nanocrystals were prepared using a photolytic method in surfactant-rich solutions the surfactant interacts strongly with areas of low curvature, thus continued growth can occur only at the sharjD tips of nanocrystals, leading to the fonnation of high-aspect-ratio nanostmctures [52].

Another important use of dielectrics is as intermetal dielectrics (IMDs), where the dielectrics insulate metal lines from each other. The dielectric material must fill small gaps with high aspect ratios (depth to width) while maintaining all other dielectric properties. It is essential that the IMDs are void-free at submicrometer dimensions for both performance and rehabiUty. 

Wet Ground Mica. Wet ground mica is used because of its unique properties, ie, luster, sHp and sheen, and high aspect ratio (1,1 )-... 

As with any other fabrication process, masks are needed to define the features to be etched. It is common that the etch used for the semiconductor also etches the masking material. For this reason many different masks are used in etching, including photoresist, dielectric films, and metals. Masking can be a complex issue, especially when very deep etches (>5 fim) are performed with high aspect ratios (148). 

The aspect ratio E/IE refers to the shape of the particles in the discontinuous phase. It is the average dimension of this phase parallel to the plane of the film E divided by the average dimension perpendicular to the film W. Plates in the plane of the film would have a high aspect ratio. Spheres or cubes would have an aspect ratio equal to 1. 

Particle shape also affects the sintering of a powder compact. Jagged or irregular shaped particles, which have a high surface area to volume ratio, have a higher driving force for densification and sinter faster than equiaxed particles. High aspect ratio platey particles, whiskers, and fibers, which pack poorly, sinter poorly. 

Whisker reinforcement is a viable method of toughening composites. However, health considerations associated with the aspiration of fine, high-aspect-ratio whiskers raise serious concern about their widespread use. 

There has been a continual increase in size and complexity of PCBs with a concurrent reduction in conductor and hole dimensions. Conductors can be less than 250 p.m wide some boards have conductors less than 75 pm wide. Multilayer boards greater than 2.5 mm thick having hole sizes less than 250 pm are being produced. This trend may, however, eventually cause the demise of the subtractive process. It is difficult to etch such fine lines using 35-pm copper foils, though foils as thin as 5 pm are now available. It is also difficult to electroplate holes having high aspect ratio. These factors may shift production to the semiadditive or fully additive processes. 

Yullj Additive Method. No electrolytic plating step is used ia the fully additive process. The copper circuit is formed directly on the board without a continuous copper film. Heavy-build electroless coppers are used to iacrease the final thickness of the entire circuit. This process is much more difficult to control than the others. Additive processiag is becoming increasingly important ia high aspect ratio, very small diameter through-holes that caimot be easily electrolyticaHy plated. 

Aspect ratio. Aspect ratio is the length of the particle divided by its diameter. A high aspect ratio (typically provided by fibres) provides reinforcement of polymers. The majority of fillers have a low aspect ratio (below 10). 

A high aspect ratio (e.g., above 100) usually does not pose any problems (Fig. 1 1.4). Biasing causes larger problems, both in terms of convergence and accuracy. Preferably, biasing should be smaller than approximately 1.1, that IS, the cell size between two adjacent cells in one direction should not increase or decrease by more than 10%. 

In addition to chemical or physical properties, a fascinating aspect of fullerene related materials is their central empty space, where atoms, molecules or particles can be enclosed. The enclosed particles are then protected by the robust graphitic layers from chemical or mechanical effects. The very long cavities of CNTs have a special potential due to their high aspect ratio and they can be used as templates to fabricate elongated nanostructures. 

Figure 9-6T. (Top) Cascade Mini-Ring, (metal and plastic). Originally used by permission of Mass Transfer, Inc., now, Glitsch, Inc. (middle and bottom) Elevation and plan views of Ballast rings (right) and Cascade Mini-Rings (left). Note how high aspect ratio of former permits occlusion of interior surfaces. Low aspect ratio of Cascade Mini-Rings, on the other hand, favors orientation that exposes internal surfaces for excellent film formation, intimate mixing, and gas-liquid contact. Used by permission of Glitsch, Inc. Bull. 345.

Landerman (1994) developed an analytical model for two-phase boiling heat transfer in a high aspect ratio rectangular channel. The flow regimes in the channel were mapped and then the heat transfer and wall temperature were evaluated, using heat transfer coefficients taken from the literature. 

Interconnect. Three-dimensional structures require interconnections between the various levels. This is achieved by small, high aspect-ratio holes that provide electrical contact. These holes include the contact fills which connect the semiconductor silicon area of the device to the first-level metal, and the via holes which connect the first level metal to the second and subsequent metal levels (see Fig. 13.1). The interconnect presents a major fabrication challenge since these high-aspect holes, which may be as small as 0.25 im across, must be completely filled with a diffusion barrier material (such as CVD titanium nitride) and a conductor metal such as CVD tungsten. The ability to fill the interconnects is a major factor in selecting a thin-film deposition process. 

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