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Reactive ion etching inductively-coupled plasma

In this report, the fabrication of Si nanodot arrays using niobium oxide nanopillars as an etching mask was performed by an inductively coupled plasma reactive ion etching (ICPRIE). [Pg.361]

Inductively coupled plasma reactive ion etching of Co2MnSi magnetic Aims for magnetic random access memory... [Pg.377]

I ICP ICP-RIE ICTS ID IDB IR interstitial inductively coupled plasma etching inductively-coupled-plasma reactive ion etching isothermal capacitance transient spectroscopy inversion domain inversion domain boundary infrared... [Pg.696]

RIE MERIE ICP RIBE ECR CAIBE Reactive ion etching Magnetically enhanced reactive ion etching Inductively coupled plasma Reactive ion beam etching Electron cyclotron resonance Chemically assisted ion beam etching Chemical-physical Chemical-physical Chemical-physical Chemical-physical Chemical-physical Chemical-physical... [Pg.67]

In this study, the reactive ion etching of Co2MnSi magnetic films with TiN hard mask was investigated in an inductively coupled plasma (ICP) of a Cl2/02/Ar gas mix. The effects of gas concentration on etch characteristics of Co2MnSi films were explored. [Pg.377]

One way to fabricate such a reactor is by deep reactive ion etching (DRIE) with a time-multiplexed inductively coupled plasma etcher (most details on fabrication are given in [77]) [7, 77, 78]. Regions of major importance such as the retainers are etched through to avoid differences in stmctural depth which may cause uneven flow. To generate various channel depths in one design, both front-side and back-... [Pg.282]

FIGURE 52.2 Schematic drawing of both reactive ion etching (RIE) and inductively coupled plasma (ICP) etching systems. In both cases, RF radiation is used to induce a plasma that is subsequently driven to the surface as a result of the charges on the gases coupled to a potential bias on an electrode underneath the substrate. [Pg.1444]

Time-multiplexed deep etching (TMDE) is a special deep reactive ion etching (DRIB) process, and has been commonly applied in inductively coupled plasma (ICP) etching system for anisotropic etching and 3-D microstructure fabrication. [Pg.2084]


See other pages where Reactive ion etching inductively-coupled plasma is mentioned: [Pg.362]    [Pg.380]    [Pg.411]    [Pg.473]    [Pg.362]    [Pg.380]    [Pg.411]    [Pg.473]    [Pg.2769]    [Pg.381]    [Pg.163]    [Pg.381]    [Pg.475]    [Pg.628]    [Pg.1669]    [Pg.112]    [Pg.2927]    [Pg.1443]    [Pg.1073]    [Pg.2766]    [Pg.203]    [Pg.1673]    [Pg.84]    [Pg.84]    [Pg.147]    [Pg.2932]    [Pg.2932]   
See also in sourсe #XX -- [ Pg.411 ]




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Coupled Plasma

Coupling reactivity

Etch plasma

Induction-coupled plasma

Inductive coupled plasma

Inductive coupling

Inductively couple plasma

Inductively coupled

Inductively coupled plasma etch

Inductively coupled plasma reactive ion

Ion coupling

Ion etching

Ion/plasma etching

Plasma etching

Plasma-etched

Reactive coupling

Reactive ion etched

Reactive plasma

Reactive-ion etching

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