Plasma etching spectroscopy

I ICP ICP-RIE ICTS ID IDB IR interstitial inductively coupled plasma etching inductively-coupled-plasma reactive ion etching isothermal capacitance transient spectroscopy inversion domain inversion domain boundary infrared... 

Sample preparation. Thin films of PBTMSS for Rutherford backscattering spectroscopy (RBS) and general plasma etching studies were spun on polished silicon wafers from a 3.5% solution in chlorobenzene using a photoresist spinner. The films were baked for 10 to 20 min. at 105-120 X in air. PBTMSS films for Auger electron spectroscopy (AES) studies were spin-coated on silicon wafers previously coated with 2000 A of gold. Films for IR studies were spin-coated onto NaCl plates. 

Low-wavenumber Raman bands of MWCNT were assigned in terms of modes from coupling of radial breathing modes of individual tubes via van der Waals interactions.279 The Raman spectra of MWCNT prepared at 470°C showed the coexistence of graphite and amorphous carbon units.280 Micro-Raman spectra were used to characterise 13C-labelled MWCNT.281 The Raman spectra of MWCNT s subjected to plasma-etching were used to identify structural defects introduced thereby.282 Raman spectroscopy was used to compare the structures of MWCNT s prepared by high-temperature arc and low-temperature CVD methods. The former had a more graphite-like structure.283 Micro-Raman spectroscopy was used to characterise MWCNT obtained by electrophoretic deposition.284... 

Static secondary ion mass spectroscopy (SSIMS) ranks with XPS as one of the principal surface analytical techniques. Treatment of polymer surfaces to improve their properties with respect to wetting or water repulsion and to adhesion, is by now a standard procedure. The treatment is designed to change the chemistry of the outermost groups in the polymer without affecting bulk properties. One popular surface treatment is plasma etching. The use of SSIMS is most amenable to the surface evaluation of such treated materials. 

Hargis, P. J., Jr., and M. J. Kushner. Detection of CF2 radicals in a plasma etching reactor by a laser induced fluorescence spectroscopy. 

The application of photoelectron spectroscopy to semiconductors euid semiconductor device structiires has been demonstrated through its application to the silicon dioxide-silicon interface, ni-V compound semiconductor metal jimctions, and plasma etching residues. Through the use of profiling methods, chemical depth profiles are obtained and are extremely useful to device structural studies. Many methods such as in-situ film growth, film deposition, air-lock mounted pretreatment chambers, etc., have been employed to study semiconductor surfaces and device structures. 

The most direct need for plasma diagnostic techniques results from the determination of the etch end point for a given process. In addition, plasma diagnostic techniques are used for process monitoring and provide information on the types of species present in a plasma etching, the concentration, and the energy content. Laser interferometry (or reflectance) and optical emission spectroscopy (OES) are two commonly used techniques for EPD and require only an appropriate optical window attached to the chamber. They are easily implemented to obtain information about etching plasmas [1]. 

A Dektak siuface profilometer was used to measure the etch rates. The profiles of the etched films were observed by field emission scanning electron microscopy (FESEM). In addition, x-ray photoelectron spectroscopy PCPS) was utilized to examine the existence of possible etch products or redeposited materials, and to elucidate the etch mechanism of Co2MnSi magnetic films in a CVOa/Ar plasma. 

Surface characterization by XPS, Auger spectroscopy and SEM of GaAs after reactive ion etching of the GeMoW contact in a radio frequency SF6/02 plasma has led the first evidence for GaOF as a layer on GaAs [13]. 

The surface concentration of copper before etching (in this case, 179 ppm) could be measured by x-ray photoelectron spectroscopy. Therefore A = 179 ppm and the average concentration (in this case, 140 ppm) can be measured by inductively coupled plasma spectroscopy. The average concentration of copper, C, can be derived as... 

Figure 2.17. Electron spectroscopy for chemical analysis ESCA) spectra of organometallic polymer films before and after exposure to oxygen plasma. The silicon 2p transition page 99) is shifted from 99.7 to 102.4 eV. The magnitude of the shift is consistent uMh conversion to SiO, where x is between 1.5 and 2. The Sn 3d transitions of the organotin compound above) undergo a similar shift 1.7 eV), consistent with generation of a SnOx surface, where x is again between 1.5 and 2. Argon sputter etching followed by ESCA analysis indicates that these oxide films are less than 100 A thick.

Nishizawa, J., and N. Hayasaka In situ observation of plasmas for dry etching by IR spectroscopy and probe methods. Thin Solid Films,... 

Important plasma diagnostics include Langmuir probes, optical emission spectroscopy, laser induced fluorescence, absorption spectroscopy, mass spectrometry, ion flux and energy analysis, and plasma impedance analysis. A plasma reactor equipped with several of these diagnostics is shown in Fig. 51 [35, 160]. A capacitively coupled plasma is sustained between the parallel plates of the upper (etching) chamber. The lower (analysis) chamber is differentially pumped and communicates with the etching chamber through a pinhole on the lower electrode. 

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