Time-Multiplexed Plasma Etching

Time-multiplexed deep etching (TMDE) is a special deep reactive-irai etching (DRIE) process and has been commcmly applied in inductively coupled plasma (ICP) etching systems for anisotropic etching and 3D microstructiu e fabricatimi. 

One way to fabricate such a reactor is by deep reactive ion etching (DRIE) with a time-multiplexed inductively coupled plasma etcher (most details on fabrication are given in [77]) [7, 77, 78]. Regions of major importance such as the retainers are etched through to avoid differences in stmctural depth which may cause uneven flow. To generate various channel depths in one design, both front-side and back-... 

The structures were etched using a time-multiplexed inductively coupled plasma etch (Figure 3.21). On the back side of such a stmctured silicon wafer holes were... 

Microfabrication involves multiple photolithographic and etch steps, a silicon fusion bond and an anodic bond (see especially [12] for a detailed description, but also [11]). A time-multiplexed inductively coupled plasma etch process was used for making the micro channels. The microstructured plate is covered with a Pyrex wafer by anodic bonding. 

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